Publication

Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes

Elyahou Kapon, Jean-François Carlin, Alok Rudra, Vladimir Iakovlev, Claude-Albert Berseth
1998
Journal Articles

Abstract

Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650 degrees C.

Official source

https://infoscience.epfl.ch/entities/publication/c9f8e08b-90f4-49ee-b8db-a635d00912c4

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Elyahou Kapon, Jean-François Carlin, Alok Rudra, Vladimir Iakovlev, Claude-Albert Berseth
1998
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c9f8e08b-90f4-49ee-b8db-a635d00912c4

About this result

Related concepts (32)

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

Laser

A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Related publications (2)

Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes

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