Publication

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi
2019
Journal Articles

Abstract

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

Official source

https://infoscience.epfl.ch/entities/publication/32b5961c-bc12-4d30-bbba-2d07af397c19

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Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

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