Jean-François Carlin

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Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...

Semiconductor membranes are widely used in research fields that target medical, biological, environmental, and optical applications. Often such membranes derive their functionality from a nanopatterning, which challenges the determination of their optical, electronic, mechanical, and thermal properties. In this work, we demonstrate the noninvasive, all-optical thermal characterization of approximately-800-nm-thick and approximately-150-& micro;m-wide membranes that consist mainly of wurtzite GaN and a stack

We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltai ...

In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced from 1.9x10(10) to 0.6x10(10) cm(-2) as the growth rate decreases from 0.075 to 0.019 ML/s, while the island size becomes larger. Correspondingly, the emission wavelength shifts to the longer side. By increasing the indium fraction in the InGaAs capping layer, t

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitat ...

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

By performing pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in a wurtzite GaN/AlGaN quantum well (QW)grown by metal organic vapor phase epitaxy. The circular degree of polarization of the differential reflectivity sign ...

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

We report on the properties of III-nitride based microcavities (MCs) operating in the strong coupling regime (SCR) up to room temperature. We first discuss why this class of materials is well suited to investigate the physics of cavity polaritons, which ar ...

We report on progress in the realization of Field Emission Devices (FED) with AlN-based anodes emitting in the spectral window of 200-230nm for persistent disinfection of air and surfaces in the presence of humans. Modeling, experimental studies, and trade ...

High-electron mobility transistors (HEMTs) were fabricated from heterostructures consisting of undoped In0.2Al0.8N barrier and GaN channel layers grown by metal-organic vapor phase epitaxy on (0001) sapphire substrates. The polarization-induced two-dimensi ...

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica ...

We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...

Applications such as optical clocks, gas spectroscopy, and optical coherent tomography stand to benefit significantly from the integration of on-chip supercontinuum sources. Materials exhibiting both second- and third-order nonlinearities are particularly ...

Jean-François Carlin

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Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

Thermal analysis of GaN-based photonic membranes for optoelectronics

Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mu m applications

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Broadband blue superluminescent light-emitting diodes based on GaN

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

AlN-based anodes for far-UVC field emission device at 225 nm

InAIN/GaN HEMTs: A first insight into technological optimization

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Multi-octave bandwidth supercontinuum generation in crystalline Aluminum Nitride-on-sapphire waveguides