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Jean-François Carlin

Cette personne a quitté l’EPFL

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Publications associées (180)

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Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Sylvain Nicolay

We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltai ...

2006

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Romuald Houdré, Nicolas Grandjean, Jean-François Carlin, Vincenzo Savona, Matteo Galli, Momchil Minkov, Mohamed Sabry Abdel-Aliem Mohamed

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitat ...

2017

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

2008

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

AIP American Institute of Physics2011

Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

By performing pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in a wurtzite GaN/AlGaN quantum well (QW)grown by metal organic vapor phase epitaxy. The circular degree of polarization of the differential reflectivity sign ...

2010

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Sylvain Nicolay

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...

2006

Broadband blue superluminescent light-emitting diodes based on GaN

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Davide Maria Di Paola, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Joachim Armand Simonne Ciers

Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timesca ...

Nature Research2021

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Jacques Levrat

We report on the properties of III-nitride based microcavities (MCs) operating in the strong coupling regime (SCR) up to room temperature. We first discuss why this class of materials is well suited to investigate the physics of cavity polaritons, which ar ...

Wiley-Blackwell2009

AlN-based anodes for far-UVC field emission device at 225 nm

Nicolas Grandjean, Jean-François Carlin, Pierre Jean-François Jules Demolon

We report on progress in the realization of Field Emission Devices (FED) with AlN-based anodes emitting in the spectral window of 200-230nm for persistent disinfection of air and surfaces in the presence of humans. Modeling, experimental studies, and trade ...

SPIE2024

InAIN/GaN HEMTs: A first insight into technological optimization

Jean-François Carlin

High-electron mobility transistors (HEMTs) were fabricated from heterostructures consisting of undoped In0.2Al0.8N barrier and GaN channel layers grown by metal-organic vapor phase epitaxy on (0001) sapphire substrates. The polarization-induced two-dimensi ...

2006

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica ...

2010

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Nicolas Grandjean, Romuald Houdré, Jean-François Carlin, Matteo Galli, Momchil Minkov, Marco Clementi, Jun Wang

Second-harmonic generation in nonlinear materials can be greatly enhanced by realizing doubly resonant cavities with high quality factors. However, fulfilling such doubly resonant condition in photonic crystal (PhC) slab cavities is a long-standing challen ...

2020

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...

Institute of Electrical and Electronics Engineers2009

Multi-octave bandwidth supercontinuum generation in crystalline Aluminum Nitride-on-sapphire waveguides

Nicolas Grandjean, Camille Sophie Brès, Jean-François Carlin, Raphaël Butté, Samantha Sbarra, Samuele Brunetta

Applications such as optical clocks, gas spectroscopy, and optical coherent tomography stand to benefit significantly from the integration of on-chip supercontinuum sources. Materials exhibiting both second- and third-order nonlinearities are particularly ...

International Society for Optical Engineering2025

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Nicolas Grandjean, Jean-François Carlin

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times- ...

2010