Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

2018

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Vincenzo Savona, Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Matteo Galli, Momchil Minkov, Mohamed Sabry Abdel-Aliem Mohamed

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitat ...

2017

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau, Irene Sánchez Arribas, Kanako Shojiki

The mechanisms contributing to experimental quality factors of shortwavelength (lambda = 440-480 nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and qu ...

Amer Physical Soc2017

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Gwénolé Jean Jacopin

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a sys ...

American Institute of Physics2017

Propagating Polaritons in III-Nitride Slab Waveguides

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Joachim Armand Simonne Ciers

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

American Physical Society (APS)2017

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Gediminas Liaugaudas

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Spie-Int Soc Optical Engineering2016

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Jean-François Carlin, Benoît Marie Joseph Deveaud, Nicolas Grandjean, Gwénolé Jean Jacopin, Wei Liu

We investigate the dynamics of donor bound excitons (D degrees X-A) at T = 10K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. A ...

Amer Inst Physics2016

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having too slow thermal emission rates to be detected by other deep level spectroscopy techniques. We will ...

Amer Inst Physics2016

GaN-based superluminescent diodes with long lifetime

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their r ...

Spie-Int Soc Optical Engineering2016

Far-field coupling in nanobeam photonic crystal cavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau, Irene Sánchez Arribas

We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal p ...

Amer Inst Physics2016

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

The capacitance-voltage-temperature characteristics of nonintentionally doped In0.16Al0.84 N/n+- GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poiss ...

American Institute of Physics2015

Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Noelia Vico Triviño

IIIV photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low ...

Amer Chemical Soc2015

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Jean-François Carlin, Nicolas Grandjean, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

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