Lecture

Formation of Bands in Semiconductors: Understanding Silicon and Gallium Arsenide

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In course

MICRO-312: Physics of semiconductors devices

Les étudiants savent expliquer la physique des composants semiconducteurs, tels que diodes, transistors et composants MOS. Ils les utilisent dans des circuits électroniques fondamentaux tels qu'inverseurs et ampli. ...

Description

This lecture discusses the formation of bands in semiconductors, focusing on silicon and gallium arsenide. It begins by explaining how atoms with varying numbers of available electrons can form one-dimensional, two-dimensional, and three-dimensional structures. The instructor describes the electronic structure of silicon, highlighting its four valence electrons and the tetrahedral bonding configuration that allows for covalent bonds with adjacent atoms. The lecture also covers the characteristics of III-V semiconductors, such as gallium arsenide, and their electronic properties. The crystalline structure is examined, including the concept of unit cells and Miller indices, which are essential for understanding crystal planes. The instructor explains how the arrangement of atoms leads to the formation of valence and conduction bands, as well as the forbidden band gap. The lecture concludes with a discussion on the implications of these concepts for the behavior of electrons and phonons in crystalline materials, emphasizing the importance of band theory in semiconductor physics.

Instructor

Pierre-André Besse

Teaching & PhD Past EPFL PhD Students Klaus Ehrmann Courses La science quantique : une vision singulière MICRO-444 Students understand the characteristics of quantum science. They master the formalism and use it in basic quantum systems: quantum wells, wires, dots or qubits. Physics of semiconductors devices MICRO-312 The students are able to explain the physics of semiconductor devices like diodes, transistors, and MOS devices. They use such devices in fundamental electroni

Official source

Ontological neighbourhood

Chemistry

Inorganic chemistry: Coordination chemistry

Related concepts (32)

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

Crystal structure

In crystallography, crystal structure is a description of the ordered arrangement of atoms, ions, or molecules in a crystalline material. Ordered structures occur from the intrinsic nature of the constituent particles to form symmetric patterns that repeat along the principal directions of three-dimensional space in matter. The smallest group of particles in the material that constitutes this repeating pattern is the unit cell of the structure.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

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