Lecture

Quantum Structures: Band Gaps and Heterostructures

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In course

MICRO-444: La science quantique : une vision singulière

Les étudiants comprennent les caractéristiques de la science quantique. Ils en maitrisent le formalisme et l'appliquent dans les systèmes de base: puits, fils et boites quantiques, qubits. ...

Description

This lecture discusses the formation and properties of quantum wells and heterostructures, focusing on the behavior of energy bands and gaps in various materials. The instructor explains the differences between metals, semiconductors, and insulators, detailing how their electronic structures influence conductivity. The lecture covers the significance of band coupling, the effects of temperature on band formation, and the role of electron affinity in determining material properties. Examples of semiconductor devices, such as PN junctions and photodiodes, are presented to illustrate practical applications of these concepts. The instructor also addresses the challenges in creating efficient lasers from silicon compared to direct bandgap materials like gallium arsenide. The discussion extends to the unique properties of graphene and its implications for future technologies. Throughout the lecture, the instructor emphasizes the mathematical equations governing these structures and their relevance in semiconductor design, providing a comprehensive overview of the principles underlying modern quantum science.

Instructor

Pierre-André Besse

Teaching & PhD Past EPFL PhD Students Klaus Ehrmann Courses La science quantique : une vision singulière MICRO-444 Students understand the characteristics of quantum science. They master the formalism and use it in basic quantum systems: quantum wells, wires, dots or qubits. Physics of semiconductors devices MICRO-312 The students are able to explain the physics of semiconductor devices like diodes, transistors, and MOS devices. They use such devices in fundamental electroni

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Electrical engineering

Photonics: Topics in photonics

Related concepts (32)

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

Valence and conduction bands

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it.

Energy level

A quantum mechanical system or particle that is bound—that is, confined spatially—can only take on certain discrete values of energy, called energy levels. This contrasts with classical particles, which can have any amount of energy. The term is commonly used for the energy levels of the electrons in atoms, ions, or molecules, which are bound by the electric field of the nucleus, but can also refer to energy levels of nuclei or vibrational or rotational energy levels in molecules.

Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.

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