Lecture

Effective Masses in Semiconductor Physics

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In course

MICRO-312: Physics of semiconductors devices

Les étudiants savent expliquer la physique des composants semiconducteurs, tels que diodes, transistors et composants MOS. Ils les utilisent dans des circuits électroniques fondamentaux tels qu'inverseurs et ampli. ...

Description

This lecture discusses the concept of effective masses in semiconductor physics, focusing on the formation of energy bands and their implications for materials like silicon and gallium arsenide. The instructor explains the differences between metals, semiconductors, and insulators, highlighting the role of band gaps and effective mass in determining electrical properties. The lecture covers the dispersion relations and the effective mass approximation, detailing how these concepts relate to the behavior of charge carriers in semiconductors. The discussion includes examples of effective masses for various materials and their significance in device applications. Additionally, the instructor addresses the anisotropy of effective masses and its consequences for piezoresistive effects in silicon. The lecture concludes with practical applications and measurements related to band gaps and absorption coefficients, providing a comprehensive overview of the topic.

Instructor

Pierre-André Besse

Teaching & PhD Past EPFL PhD Students Klaus Ehrmann Courses La science quantique : une vision singulière MICRO-444 Students understand the characteristics of quantum science. They master the formalism and use it in basic quantum systems: quantum wells, wires, dots or qubits. Physics of semiconductors devices MICRO-312 The students are able to explain the physics of semiconductor devices like diodes, transistors, and MOS devices. They use such devices in fundamental electroni

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Chemistry

Organic chemistry: Organometallic chemistry

Electrical engineering

Photonics: Topics in photonics

Related concepts (32)

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Band gap

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.

Fermi level

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or EF for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

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