Lecture

Focused Ion Beam: Principles and Applications

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

In course

MSE-704: 3D Electron Microscopy and FIB-Nanotomography

The principles of 3D surface (SEM) reconstruction and its limitations will be explained. 3D volume reconstruction and tomography methods by electron microscopy (SEM/FIB and TEM) will be explained and compared with x-ray tomography. ...

Description

This lecture covers the principles and applications of Focused Ion Beam (FIB) technology, including how it works, basic applications like imaging and milling, and advanced techniques such as FIB Nanotomography for 3D microscopy. It explains the components of a modern FIB system, the interaction between ion and electron beams, ion sources, and the ion-solid interaction. The lecture also discusses the advantages of using ions over electrons, different operating modes of FIB, and techniques like sputtering, deposition, and nanomachining. Additionally, it explores topics such as ion beam-induced imaging, ion-solid interactions, and the preparation of TEM samples using FIB.

Instructors (2)

Marco Cantoni

1982-1988, Diploma course in Experimental Physics (certificate, 28.10.88)ETHZ Faculty IX MATHEMATICS and PHYSICS, Diploma Thesis: "Abweichungen von der ikosaedrischen Symmetrie in Al-Cu-Li Quasikristallen", Advisor: Prof. H.-U. Nissen 1989-1993, Ph.D. in Experimental Physics (certificate, 23.8.94) ETHZ Physics Department, Laboratory of Solid State Physics, Ph. D. Thesis No. 10421, Title: "Elektronenmikroskopische Untersuchung der Realkristallstruktur epitaktischer Schichten von Supraleitern des Typs SEBa2Cu3O7-x auf (100)-SrTiO3" Advisors: Prof. H.R. Ott, Prof. H. U. Nissen. 1994-1996,ETH Zürich,Material Science Department, Non-Metallic Materials, Prof. L. Gauckler: Microstructure characterisation of high-tech ceramic materials by means of SEM, TEM and atomic force microscopy: superconductor thick films (Bi-2212 on Ag) and solid oxide fuel cells (ZrO2, CeO2). 1996-1998, National Institute for Research in Inorganic Materials NIRIM, Japan Group for Special Research, Prof. S. Horiuchi: TEM of Bi-2223/Ag Tapes, Application of Imaging Plates (IP) in High Voltage TEM, Cryo-Lorentz-TEM of Superconducting Materials (Observation of Flux-Lines) 1998-2000, Ecole polytechnique fédéral de Lausanne, EPFL-CIME Centre interdépartemental de microscopie électronique CIME, Prof. P.A. Buffat: Projet 125, PPO II (programme prioritaire optique): Characterization of materials and devices for optic and optoelectronic applications by electron microscopy. 2001-2003, Ecole polytechnique fédéral de Lausanne, EPFL STI IMX LCCeramics Laboratory, Prof. Nava Setter Characterisation of ferroelectric materials, transmission electron microscopy of relaxor ferroelectric materials 2004, University of Geneva, Physics Department, Condensed matter Physics Group of Prof. R. Flükiger, TEM of Multifilament Nb3Sn superconducting wires, in collaboration with EPFL-CIME Since 1.11.04, EPFL-SB-CIME

Lucie Navratilova

Expertise Scanning electron microscopy SEM Dual beam microscope SEM/FIB EDX analysis Teaching & PhD Courses 3D Electron Microscopy and FIB-Nanotomography MSE-704 The principles of 3D surface (SEM) reconstruction and its limitations will be explained. 3D volume reconstruction and tomography methods by electron microscopy (SEM/FIB and TEM) will be explained and compared with x-ray tomography. Scanning electron microscopy techniques (a) MSE-636(a) This intensive course is inten

Official source

Related concepts (30)

Ion source

An ion source is a device that creates atomic and molecular ions. Ion sources are used to form ions for mass spectrometers, optical emission spectrometers, particle accelerators, ion implanters and ion engines. Electron ionization Electron ionization is widely used in mass spectrometry, particularly for organic molecules. The gas phase reaction producing electron ionization is M{} + e^- -> M^{+\bullet}{} + 2e^- where M is the atom or molecule being ionized, e^- is the electron, and M^{+\bullet} is the resulting ion.

Ion beam

An ion beam is a type of charged particle beam consisting of ions. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. A variety of ion beam sources exists, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most common ion beams are of singly-charged ions. Ion current density is typically measured in mA/cm^2, and ion energy in eV.

Secondary ion mass spectrometry

Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm.

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Ion implantation

Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target.

Related lectures (64)

High Resolution He Ion Microscopy

Covers the ALIS He ion source and its application in high resolution microscopy, providing remarkable surface detail and material contrast.

Focused Ion Beam: Principles and Applications

Explores the principles and applications of Focused Ion Beam technology, including ion-solid interactions, ion milling, and nanofabrication.

MEMS & Cleanroom: Thin Material Layers and Vapor Creation

Introduces MEMS, Cleanroom technology, thermal oxidation, vapor creation, and film formation principles.

Sputtering: Ion Target Interactions MOOC: Micro and Nanofabrication (MEMS)

Examines ion-target interactions in PVD sputtering processes, covering compound deposition, surface damage, and factors influencing target ejection rates.

Optical Microscopy: Techniques and Applications