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Lecture

Electro Absorption Modulation: Basics and Applications

In course

EE-440: Photonic systems and technology

The physics of optical communication components and their applications to communication systems will be covered. The course is intended to present the operation principles of contemporary optical communication systems employing optical fibers and modern op ...

Description

This lecture covers the electro absorption modulation based on the Franz Keldysh effect, where an applied electric field alters the absorption coefficient. It explains the red shift in the absorption band edge and the concept of transmittance in EA modulators. The instructor discusses the materials and structures used in EA modulators, emphasizing the advantages such as the ability to operate at zero bias voltage and integration with semiconductor lasers. A comparison between EA modulators and MZI modulators is presented, highlighting the benefits of EA modulators in terms of voltage requirements, polarization independence, integration capabilities, compactness, and cost-effectiveness.

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Instructor

Camille Sophie Brès

Prof. Camille-Sophie Brès is an Associate Professor in the Institute of Electrical Engineering within the School of Engineering of EPFL. Her primary research interests are centered optical communications and on parametric and nonlinear processes in optical fiber and non-silica platforms for ultrafast signal processing, all optical networks, sensing and light sources. She has authored over thirty peer-reviewed journal articles and has presented more than 15 papers at international conferences. She received the Gordon Wu Fellowship for her graduate studies, the NSF CIANs Diversity Postdoctoral Fellowship in 2009, the Early Career Woman in Engineering Award in 2016. She is a senior member of the IEEE and OSA. 2019 - present: Associate Professor in the Institute of Electrical Engineering, EPFL 2011 - 2018: Assistant Professor in the Institute of Electrical Engineering, EPFL 2010 - 2011: Assistant Project Scientist, University of California San Diego (UCSD) 2007 - 2010: Postdoc in ECE, University of California San Diego (UCSD) 2002 - 2007: Ph.D in Electrical Engineering, Princeton University 1998 - 2002: B.Eng with Honours in Electrical Engineering, McGill University

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Related concepts (19)

Attenuation coefficient

The linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient value that is large represents a beam becoming 'attenuated' as it passes through a given medium, while a small value represents that the medium had little effect on loss. The SI unit of attenuation coefficient is the reciprocal metre (m−1).

Transmittance

Transmittance of the surface of a material is its effectiveness in transmitting radiant energy. It is the fraction of incident electromagnetic power that is transmitted through a sample, in contrast to the transmission coefficient, which is the ratio of the transmitted to incident electric field. Internal transmittance refers to energy loss by absorption, whereas (total) transmittance is that due to absorption, scattering, reflection, etc.

Molar absorption coefficient

In chemistry, the molar absorption coefficient or molar attenuation coefficient (ε) is a measurement of how strongly a chemical species absorbs, and thereby attenuates, light at a given wavelength. It is an intrinsic property of the species. The SI unit of molar absorption coefficient is the square metre per mole (), but in practice, quantities are usually expressed in terms of M−1⋅cm−1 or L⋅mol−1⋅cm−1 (the latter two units are both equal to ). In older literature, the cm2/mol is sometimes used; 1 M−1⋅cm−1 equals 1000 cm2/mol.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Absorption spectroscopy

Absorption spectroscopy refers to spectroscopic techniques that measure the absorption of electromagnetic radiation, as a function of frequency or wavelength, due to its interaction with a sample. The sample absorbs energy, i.e., photons, from the radiating field. The intensity of the absorption varies as a function of frequency, and this variation is the absorption spectrum. Absorption spectroscopy is performed across the electromagnetic spectrum.

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