Lecture

Interband Optical Absorption in Semiconductors

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In course

PHYS-433: Semiconductor physics and light-matter interaction

Lectures on the fundamental aspects of semiconductor physics and the main properties of the p-n junction that is at the heart of devices like LEDs & laser diodes. The last part deals with light-matter interaction phenomena in bulk semiconductors such as ab ...

Description

This lecture provides the theoretical framework behind the interband optical absorption process in direct bandgap semiconductors. It starts by deriving the transition rate between valence and conduction band states using Fermi's Golden Rule, ensuring energy and momentum conservation. The lecture then discusses the link between the linear optical susceptibility's imaginary part and the absorption coefficient. It further explores a general expression for the absorption coefficient, valid out of equilibrium, depending on the occupancy of interconnected bands. This leads to the introduction of optical gain and the Bernard-Duraffourg condition specific to semiconductors.

Instructor

Raphaël Butté

Raphaël Butté was born in Paris, France, in 1973. He received the PhD degree from the University Claude Bernard, Lyon, France, in 2000 for his research on the structural and optoelectronic properties of hydrogenated nanostructured silicon thin films with potential applications for photovoltaics and thin film transistors. He then moved to the University of Sheffield (2000-2003), UK, to work as postdoctoral research associate in the group of Prof. Maurice S. Skolnick (Fellow of the Royal Society). His research shifted to the optical properties of III-V semiconductors with a main focus on the nonlinear optical properties of cavity polaritons occurring in GaAs-based microcavities driven under resonant optical excitation. In 2004, he moved to Ecole Polytechnique Fédérale de Lausanne (EPFL) as scientific collaborator in charge of optical spectroscopy at LASPE (http://laspe.epfl.ch/), a newly established laboratory directed by Prof. Nicolas Grandjean. In 2010, he became permanent member of staff (Scientific Collaborator and Lecturer). He was promoted to the position of Senior Scientist in 2016. His current research activity deals with planar waveguides, microdisks and photonic crystals made from III-nitride semiconductors. In particular, he is leading the activity focusing on: (i) the physics of exciton-polaritons in planar waveguides and (ii) high-β photonic crystal nanolasers. He is the author of 119 scientific articles published in peer-reviewed international journals, 14 publications published in peer reviewed journals following an international conference (Web of Science > 4500 citations, h-index: 36; Google Scholar > 6200 citations, h-index: 42) and 6 book chapters. He has given 30 invited talks in International Conferences/Winter-Summer Schools/Workshops. He has been the Publications Chair/Guest Editor of the Proceedings of the 5th International Workshop on Nitride semiconductors (IWN2008) and also served as Scientific Secretary of IWN2008 and of the 5th International Conference on Spontaneous Coherence in Excitonic Systems (ICSCE5). In 2012, he was one of the 149 scientists recognized by the Outstanding Referee program (http://publish.aps.org/OutstandingReferees) of the American Physical Society (APS) selected from a pool of roughly 60,000 currently active referees. Since September 2019, he is an Editorial Board Member of the newly launched open access APS journal, Physical Review Research. From September 2013 until December 2017, he was one of the Editors of the journal "Superlattices and Microstructures" (Elsevier). Since September 2015 he is a member of the Physics Doctoral School Teaching Committee. He was also a member of the EPFL Teaching Conference from September 2015 until August 2017.

Official source

Related concepts (23)

Absorption spectroscopy

Absorption spectroscopy refers to spectroscopic techniques that measure the absorption of electromagnetic radiation, as a function of frequency or wavelength, due to its interaction with a sample. The sample absorbs energy, i.e., photons, from the radiating field. The intensity of the absorption varies as a function of frequency, and this variation is the absorption spectrum. Absorption spectroscopy is performed across the electromagnetic spectrum.

Attenuation coefficient

The linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient value that is large represents a beam becoming 'attenuated' as it passes through a given medium, while a small value represents that the medium had little effect on loss. The SI unit of attenuation coefficient is the reciprocal metre (m−1).

Absorption (electromagnetic radiation)

In physics, absorption of electromagnetic radiation is how matter (typically electrons bound in atoms) takes up a photon's energy — and so transforms electromagnetic energy into internal energy of the absorber (for example, thermal energy). A notable effect is attenuation, or the gradual reduction of the intensity of light waves as they propagate through a medium. Although the absorption of waves does not usually depend on their intensity (linear absorption), in certain conditions (optics) the medium's transparency changes by a factor that varies as a function of wave intensity, and saturable absorption (or nonlinear absorption) occurs.

Molar absorption coefficient

In chemistry, the molar absorption coefficient or molar attenuation coefficient (ε) is a measurement of how strongly a chemical species absorbs, and thereby attenuates, light at a given wavelength. It is an intrinsic property of the species. The SI unit of molar absorption coefficient is the square metre per mole (), but in practice, quantities are usually expressed in terms of M−1⋅cm−1 or L⋅mol−1⋅cm−1 (the latter two units are both equal to ). In older literature, the cm2/mol is sometimes used; 1 M−1⋅cm−1 equals 1000 cm2/mol.

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

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