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Lecture

Semiconductor Behavior

In course

PHYS-310: Solid state physics II

Ce cours de deux semestres donne une introduction à la Physique du solide, à la structure cristalline, aux vibrations du réseau, aux propriétés électroniques, de transport thermique et électrique ainsi qu'aux propriétés magnétiques. Il se situe au niveau d ...

Description

This lecture covers the behavior of semiconductors, including intrinsic and extrinsic properties, doping with impurities, charge carriers, band bending, and p-n junction formation. It also discusses the equilibrium state achieved by band bending and the creation of electric double layers.

Instructors (3)

Marina Pivetta

Harald Brune

Originaire de Münich en Allemagne, né en 1961, Harald Brune obtient son diplôme en physique de l'Université Ludwig Maximilians en 1989. Après une thèse en chimie physique à l'Institut Fritz-Haber de la Société Max-Planck à Berlin il obtient son titre de docteur ès sciences en 1992. Dès cela, il rejoint le groupe du Prof. K. Kern à l'Institut de physique expérimentale à l'EPFL. En 1995 il est chercheur invité à Copenhague travaillant en modélisation chez le Prof. J. Nørskov. De retour à l'EPFL, il se voit décerné le prix Latsis EPFL 1996 pour ses études par microscopie à effet tunnel de processus atomiques déterminants la croissance cristalline de couches minces. En 1998 il obtient son habilitation (venia legendi) en Physique et est nommé Maître d'enseignement et de recherche (MER) en nanophysique à l'EPFL. La même année il recoit une offre de Professeur Ordinaire (C4) de l'Université Philipps de Marburg. Début 1999 il réfuse cette offre et accepte un poste de Professeur Extraordinaire à l'EPFL et s'installe au sein de l'Institut de la Physique des Nanostructures. Il est nommé Professeur Ordinaire en 2005. Sa recherche porte sur les propriétés physiques (en particulier le magnétisme et la structure électronique) de nouvelles formes de la matière condensée comme des nanostructures et des couches ultra-minces. Il s'intéresse également à la catalyse hétérogène sur des systèmes inspirés dans leur composition et taille par celle des sites actives dans les enzymes en biologie. Il enseigne la Physique Générale pour ingénieurs, la Physique des matériaux solides pour physiciens, les méthodes expérimentales pour physiciens, ainsi que la Physique des surfaces, interfaces et nanostrcutures à l'école doctorale.

Oleg Yazyev

Prof. Oleg Yazyev (Олег Язев) was born in Simferopol, Crimean peninsula. He obtained his degree in chemistry from Moscow State University in 2003. He then joined Ecole Polytechnique Fédérale de Lausanne (EPFL) completing his PhD thesis in chemistry and chemical engineering in 2007. Next two years he has spent as a postdoctoral fellow at the Institute of Theoretical Physics (ITP) and the Institute for Numerical Research in the Physics of Materials (IRRMA) of the same institution. In 2009-2011 he was a postdoctoral fellow at the Department of Physics of the University of California, Berkeley and the Lawrence Berkeley National Laboratory. In September 2011 he started an independent research group supported by the Swiss National Science Foundation professorship grant. In 2012 he was awarded an ERC Starting grant. His current research focuses on theoretical and computational physics of two-dimensional and topological materials with strong emphasis on their prospective technological applications. ResearcherID profile of Oleg Yazyev Google Scholar profile of Oleg Yazyev

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Related concepts (32)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Charge carrier

In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current.

Depletion region

In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current.

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