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Lecture

Photon Absorption in SC

In course

MSE-484: Properties of semiconductors and related nanostructures

This course explains the origin of optical and electrical properties of semiconductors. The course elaborates how they change when the semiconductors are reduced to sizes of few nanometers. The course provides also the basis to use software to calculate th ...

Description

This lecture covers the optical properties of semiconductors, focusing on photon absorption in semiconductors. Topics include spectral ranges, photon energies, absorption coefficients, and direct band gap materials.

Instructors (2)

Valerio Piazza

Anna Fontcuberta i Morral

2014 Associate Professor at the Institut des Matériaux, EPFL 2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL 2009 Habilitation in Physics, Technische Universität München 2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France) 2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells) 2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France 2001-2002 Postdoctoral Scholar at the California Institute of Technology Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications Sponsor: Professor Harry A. Atwater 1998-2001 PhD in Materials Science, Ecole Polytechnique Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors Advisor: Pere Roca i Cabarrocas 1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France . 1993-1997 BA in Physics at Universitat de Barcelona

Official source

Related concepts (23)

Attenuation coefficient

The linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient value that is large represents a beam becoming 'attenuated' as it passes through a given medium, while a small value represents that the medium had little effect on loss. The SI unit of attenuation coefficient is the reciprocal metre (m−1).

Molar absorption coefficient

In chemistry, the molar absorption coefficient or molar attenuation coefficient (ε) is a measurement of how strongly a chemical species absorbs, and thereby attenuates, light at a given wavelength. It is an intrinsic property of the species. The SI unit of molar absorption coefficient is the square metre per mole (), but in practice, quantities are usually expressed in terms of M−1⋅cm−1 or L⋅mol−1⋅cm−1 (the latter two units are both equal to ). In older literature, the cm2/mol is sometimes used; 1 M−1⋅cm−1 equals 1000 cm2/mol.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Absorption spectroscopy

Absorption spectroscopy refers to spectroscopic techniques that measure the absorption of electromagnetic radiation, as a function of frequency or wavelength, due to its interaction with a sample. The sample absorbs energy, i.e., photons, from the radiating field. The intensity of the absorption varies as a function of frequency, and this variation is the absorption spectrum. Absorption spectroscopy is performed across the electromagnetic spectrum.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

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