Concept

Electronic switch

Related publications (17)

Photovoltaic creation of charged domain walls in barium titanate

The optical control of domain structures in ferroelectrics is of great interest. In the present work, we demonstrate the reliable creation of charged domain walls - conductive channels in otherwise insulating barium titanate - by a combined effect of light and electric field. We propose a scenario for the documented process, in which the bulk photovoltaic effect plays the key role, providing charge screening at the walls. Our scenario is supported by the results of phase-field simulations. The results are o

Nature Research2026

Mixed Ionic–Electronic Conduction in Layered Hybrid Halide Perovskites

Michael Graetzel

Mixed ionic–electronic conductivity of metal halide perovskites is a critical factor determining their application in optoelectronics, as well as the emerging field of optoionics. In particular, ionic migration in response to voltage bias and light contributes to the operational instability of halide perovskite materials and devices. A promising strategy to control ion migration is dimensional reduction, achieved by incorporating bulky organic cations between inorganic slabs to form two‐dimensional or layer

Wiley2026

Drug-controlled CAR T cells through the regulation of cell–cell interactions

Chimeric antigen receptor (CAR) T cell therapy is constrained by on-target, off-tumor toxicities and cellular exhaustion because of chronic antigen exposure. CARs incorporating small-molecule controlled on- and off-switches can enhance both safety and therapeutic efficacy but their design is limited by the scarcity of nonimmunogenic protein elements responsive to nonimmunosuppressive, clinically approved drugs with favorable pharmacodynamics. Here we combine rational design and library-based optimization of

Springer Science and Business Media LLC2026

Automated Interpretation of Crystallographic Structures for Data-Driven Computational Chemistry of Transition Metal Complexes

In the field of computational chemistry, the construction of databases of transition metal complexes (TMCs) from experimental crystal structures is often hindered by the intrinsic complexity of their electronic structure. Although crystallographic databases provide a vast collection of structures exhibiting broad chemical diversity, they generally lack certain key pieces of information required for quantum chemical computations, such as the total molecular charge or the ground-state spin. Beyond these chall

EPFL2026

Dynamic control of electron correlations in photodoped charge-transfer insulators

Majed Chergui

The electronic properties of correlated insulators are governed by the strength of Coulomb interactions, enabling the control of electronic conductivity with external stimuli. This work highlights that the strength of electronic correlations in nickel oxide (NiO), a prototypical charge-transfer insulator, can be coherently reduced by tuning the intensity of an optical pulse excitation. This weakening of correlations persists for hundreds of picoseconds and exhibits a recovery time independent of photodoping

American Association for the Advancement of Science (AAAS)2025

Electroactive naphthalimide and naphthalenediimide interlayers for inverted perovskite solar cells

Michael Graetzel, Shaik Mohammed Zakeeruddin

Perovskite solar cells have garnered significant interest, yet their limited operational stability remains a major challenge. This is especially pronounced at the interface with charge transport layers. In inverted p-i-n perovskite solar cells, fullerene-based electron transport layers pose critical stability issues. This has stimulated the application of low-dimensional perovskite interlayers featuring alkylammonium-based organic spacers that template perovskite slabs to enhance operational stabilities. Ho

2025

Trilayer AFM cantilever beam with piezoelectric actuation and sensing

Atomic Force Microscopes (AFMs) have revolutionized nanoscale imaging and measurement, with self-sensing cantilevers offering a more compact solution when compared to the traditionally used Optical Beam Deflection (OBD) method. The LBNI group has developed soft, high-force sensitivity self-actuating and self-sensing cantilevers, featuring piezoresistive strain sensing. In this context, piezoelectric sensing specifically offers the advantage of low heat emission when compared to piezoresistive strain sensors

EPFL2025

Structure-aware Multi-view 3D Reconstruction of Dislocations in TEM with Message Passing Neural Networks

Pascal Fua

Efficient analysis of the three-dimensional (3D) shape and distribution of curvilinear crystal defects, namely dislocations, is an open research topic in material science and computer vision. In order to determine the structural and opto-electrical characteristics of the material, accurate 3D reconstructions of dislocations are required. In its current state, an established way to obtain 3D information of dislocations is electron tomography which relies on acquiring dozens of images from tilted sample for w

2021

Ultrafast atomic-scale visualization of acoustic phonons generated by optically excited quantum dots

Fabrizio Carbone, Giovanni Maria Vanacore

Understanding the dynamics of atomic vibrations confined in quasi-zero dimen- sional systems is crucial from both a fundamental point-of-view and a technologi- cal perspective. Using ultrafast electron diffraction, we monitored the lattice dynamics of GaAs ...

2017

Exploring Nanoscale Electrical Properties of CuO-Graphene Based Hybrid Interfaced Memory Device by Conductive Atomic Force Microscopy

The phenomenon of resistive switching is based on nanoscale changes in the electrical properties of the interface. In the present study, conductive atomic force microscope based nanoscale measurements of copper oxide (CuO)-multilayer graphene (MLG) hybrid interface based devices have been carried out to understand changes in the electrical properties during resistive switching of the Ti–CuO/MLG-Cu memory cells having different dimensions fabricated on the same substrate using stencil lithography technique.

Amer Scientific Publishers2016

Molecular Engineering of Functional Materials for Energy and Opto-Electronic Applications

Mohammad Khaja Nazeeruddin, Peng Gao, Sadig Aghazada

This review presents an overview of the dedicated research directions of the Group for Molecular Engineering of Functional Materials (GMF). This includes molecular engineering aspects of sensitizers constructed from ruthenium complexes, organic molecules, ...

Swiss Chemical Soc2015

Cmos compatible non-volatile latch and d-flip flop using resistive switching materials

Davide Sacchetto, Yusuf Leblebici, Tugba Demirci

A non-volatile latch circuitry, comprising a Re RAM cell configured to store a final value of the non-volatile latch circuitry; a data selection circuitry configured to connect or disconnect a data input to a plus voltage node and a minus voltage node of t ...

2014

Atomistic simulation of the a(0) < 1 0 0 > binary junction formation and its unzipping in body-centered cubic iron

Seyed Masood Hafez Haghighat

Molecular dynamics simulation is used to study the formation of the a(0) < 1 0 0 > binary dislocation junction in body-centered cubic Fe. Results show that under an applied strain two intersecting 1/2 a(0) < 1 1 1 > dislocations, one mobile edge and one im ...

Pergamon-Elsevier Science Ltd2014

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

Mihai Adrian Ionescu

RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics, aluminum nitride (AlN) and silicon nitride (Si3N4), are presented. The switches have been characterized and compared in terms of DC and RF performance (5-40 GHz). Switches based on AlN have higher down-state capacitance for similar dielectric thicknesses and provide better isolation and smaller insertion losses compared to Si3N4 switches. Experiments were carried out on RF MEMS switches with stiffening bars to preven

Institute of Electrical and Electronics Engineers2012

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices

Jinyu Jason Ruan

This paper addresses an innovative solution to develop a circuit to perform accelerated stress tests of capacitive microelectromechanical-system (MEMS) switches and shows the use of instruments and equipment to monitor physical aging phenomena. A dedicated ...

Institute of Electrical and Electronics Engineers2012

Photoemission-induced gating of topological insulators

Helmuth Berger

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized ...

2011

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

EPFL2011

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Related publications (17)

Automated Interpretation of Crystallographic Structures for Data-Driven Computational Chemistry of Transition Metal Complexes

EPFL2026

Exploring Nanoscale Electrical Properties of CuO-Graphene Based Hybrid Interfaced Memory Device by Conductive Atomic Force Microscopy

Amer Scientific Publishers2016