Publications associées à Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

Publications associées (6)

Grayscale nanopatterning for strain-engineered 2D materials

Semiconductor innovation is shifting from traditional dimensional scaling toward novel architectures and materials as lithography nears its physical limits. FinFETs and GAAFETs have marked key milestones, with scaling now progressing through 3D stacking. M ...

EPFL2025

Exciton migration in two-dimensional materials

Giovanni Consalvo Cistaro

Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

Nature Portfolio2024

Dataset for "Tuning adatom mobility and nanoscale segregation by twin formation and polytypism"

Anna Fontcuberta i Morral, Federico Matteini, Luca Francaviglia

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

Zenodo2018

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, William Craig Carter

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Functional carbon nanosheets prepared from hexayne amphiphile monolayers at room temperature

Anna Fontcuberta i Morral, Anne-Clémence Corminboeuf, Emad Oveisi, Holger Frauenrath, Javier Reguera Gomez, Stephen Schrettl, Riccardo Petraglia, Yannik Fontana, Guillaume Pasche

Carbon nanostructures that feature two-dimensional extended nanosheets are important components for technological applications such as high-performance composites, lithium-ion storage, photovoltaics and nanoelectronics. Chemical functionalization would ren ...

Nature Publishing Group2014

Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum ...

Royal Society of Chemistry2009