Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

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Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

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Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

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Grayscale nanopatterning for strain-engineered 2D materials

Exciton migration in two-dimensional materials

Dataset for "Tuning adatom mobility and nanoscale segregation by twin formation and polytypism"

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Functional carbon nanosheets prepared from hexayne amphiphile monolayers at room temperature

Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires