Publications associées à Minimum Energy Point in Constant Frequency Designs under Adaptive Supply Voltage and Body Bias Adjustment in 55 nm DDC

EdgeAI-Aware Design of In-Memory Computing Architectures

Driven by the demand for real-time processing and the need to minimize latency in AI algorithms, edge computing has experienced remarkable progress. Decision-making AI applications stand out for their heavy reliance on data-centric operations, predominantl ...

EPFL2024

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

A 0.5 V 2.5 mu W/MHz Microcontroller with Analog-Assisted Adaptive Body Bias PVT Compensation with 3.13 nW/kB SRAM Retention in 55 nm Deeply-Depleted Channel CMOS

David Ruffieux, Andreas Peter Burg, Thomas Christoph Müller

Microcontroller systems operating at low supply voltage in near- or sub-threshold regime suffer both from increased effects of PVT (Process, Voltage, Temperature) variation and from a larger share of leakage on overall power due to the reduced frequency. W ...

IEEE2019

FPGA-Assisted Deterministic Routing for FPGAs

Mirjana Stojilovic, Dario Korolija

FPGA routing is one of the most time-consuming steps of FPGA compilation, often preventing fast edit-compile-test cycles in prototyping and development. There have been attempts to accelerate FPGA routing using algorithmic improvements, multi-core or multi ...

2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Design techniques for a stable operation of cryogenic field-programmable gate arrays

Edoardo Charbon, Harald Arjan Robert Homulle

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires ...

2018

Yttrium zinc tin oxide high voltage thin film transistors

Herbert Shea, Danick Briand, Alexis Pierre Henri Marette

We demonstrate that doping the semiconductor zinc tin oxide (ZTO) with yttrium leads to a high-voltage thin film transistor (HVTFT) with enhanced switching performance. Adding 5% yttrium leads to an increase in the on-off ratio from 40 to 1000 at an operat ...

AIP American Institute of Physics2018

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Samuel Rosset, Herbert Shea, Alexandre Poulin, Nadine Besse, Danick Briand, Alexis Pierre Henri Marette

Flexible high-voltage thin- lm transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a exible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implemen ...

Wiley-Blackwell2017

Microarchitectural Low-Power Design Techniques for Embedded Microprocessors

Jeremy Hugues-Felix Constantin

With the omnipresence of embedded processing in all forms of electronics today, there is a strong trend towards wireless, battery-powered, portable embedded systems which have to operate under stringent energy constraints. Consequently, low power consumpti ...

EPFL2016

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

A Subthreshold Current-Sensing Sigma-Delta Modulator for Low-Voltage and Low-Power Sensor Interfaces

Alexandre Schmid, Yusuf Leblebici, Seyed Armin Tajalli, Nikola Katic

A continuous-time (CT) ΣΔ modulator for sensing and direct analog-to-digital conversion of nA-range (subthreshold) currents is presented in this work. The presented modulator uses a subthreshold technique based on subthreshold source-coupled logic cells to ...

Wiley2015

Upgrade of a 30 kV/10 mA anode power supply for triode type gyrotron

Stefano Alberti, Damien Fasel, Blaise Marlétaz, Philippe Marmillod, Albert Perez, Jean-Philippe Hogge, Ugo Siravo, Jérémie Dubray

The RF power of a gyrotron with a triode type magnetron-injection-gun (MIG) can be directly controlled via the voltage applied between its anode and its cathode. Hence, the performance of this type of gyrotron relies directly on the possibilities offered b ...

Elsevier Science Sa2015

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...

Spie-Int Soc Optical Engineering2015

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on ...

Assoc Computing Machinery2015

A 2.4-GHz low power polar transmitter for wireless body area network applications

Christian Enz, Vladimir Kopta, Franz Xaver Pengg

A 2.4 GHz low power polar transmitter is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used as a direct digital-to-RF envelope converter. It effectively linearizes the input-output characteristic of the over ...

Springer Verlag2014

Remotely-Powered Batteryless Implantable Local Temperature Monitoring System for Freely Moving Mice

Brown adipose fat tissue of a mouse dissipates the animal’s energy in the form of heat. Chronically recording the temperature of this tissue helps biologists to study the metabolism of the animal and gain new insights about the obesity in humans. Such temp ...

EPFL2014

Integrated Microfluidic Power Generation and Cooling for Bright Silicon MPSoCs

David Atienza Alonso, Mohamed Mostafa Sabry Aly, Arvind Raj Mahankali Sridhar, Bruno Michel

The soaring demand for computing power in our digital information age has produced as collateral undesirable effect a surge in power consumption and heat density for computing servers. Accordingly, 30-40% of the energy consumed in state-of-the-art servers ...

IEEE/ACM Press2014

Polarity-Controllable Silicon Nanowire Transistors with Dual Threshold Voltages

Yusuf Leblebici, Giovanni De Micheli, Michele De Marchi, Davide Sacchetto, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic circuits, the control of the threshold voltage is essential fo ...

Institute of Electrical and Electronics Engineers2014