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In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

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Publications associées (33)

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p-NiO junction termination extensions for GaN power devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Alessandro Floriduz, Taifang Wang

We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, ...

IOP PUBLISHING LTD2021

Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

Victor Carle Adrien Boureau

Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green emission has bee ...

2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Measuring the Optical Absorption of Single Nanowires

Anna Fontcuberta i Morral, Wonjong Kim, Simon Robert Escobar Steinvall

In this work we present a method to quantitatively measure the optical absorption of single nanowires that can be applied over a wide range of temperatures and with a high enough sensitivity to enable the measurement of below-band-gap absorption (as well a ...

American Physical Society (APS)2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Nanoscale Controlled Oxidation of Liquid Metals for Stretchable Electronics and Photonics

Stéphanie Lacour, Fabien Sorin, Wei Yan, Louis Marie Philippe Martin-Monier

Liquid metals based on gallium have attracted considerable attention for soft and bioelectronics, thanks to their excellent combination of stretchability and conductivity. Nevertheless, owing to their large surface tension, these materials are notoriously ...

2020

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

GaN Quantum Dots for Room Temperature Excitonic Physics

Sebastian Pascal Tamariz Kaufmann

Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

EPFL2019

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu, Wei Liu

Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Camille Haller

Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...

EPFL2019