Publication

Single crystalline diamond part production method for stand alone single crystalline mechanical and optical component production

Publications associées (29)

System and method for removing scalloping and tapering effects in high aspect ratio through-silicon vias of wafers

Edoardo Charbon, Sandro Carrara, Simone Frasca, Rebecca Camilla Leghziel

A method for manufacturing vias in a silicon wafer, the silicon wafer having a crystal orientation, and having a plane that is perpendicular to a surface of the wafer, tilted by 35.26°, the method comprising the steps of providing a mask having ...

2021

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

Crystal-Size-Induced Band Gap Tuning in Perovskite Films

Michael Graetzel, Amita Ummadisingu, Simone Meloni, Wolfgang Richard Tress

A comprehensive picture explaining the effect of the crystal size in metal halide perovskite films on their opto-electronic characteristics is currently lacking. We report that perovskite nanocrystallites exhibit a wider band gap due to concurrent quantum ...

Wiley-VCH Verlag GmbH2021

Quantum vibronic effects on the electronic properties of solid and molecular carbon

François Gygi, Michele Ceriotti, Han Yang

We study the effect of quantum vibronic coupling on the electronic properties of carbon allotropes, including molecules and solids, by combining path integral first principles molecular dynamics (FPMD) with a colored noise thermostat. In addition to avoidi ...

AMER PHYSICAL SOC2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

Structural investigation of InSe layered semiconductors

Helmuth Berger, Daniela Pacilè

During the last decade, III-VI layered semiconductors (GaSe, InSe, GaS, etc.) have emerged as potential candidates for various applications, such as FET and optoelectronic devices. The properties of this class of layered materials are strongly dependent on ...

2020

Triplet grain growth in a-texture polycrystalline ZnO thin films

Arthur Brian Aebersold, Cécile Hébert, Duncan Thomas Lindsay Alexander

A growth of grain triplets is identified in vapor deposited, a-texture polycrystalline zinc oxide thin films, using a combination of transmission electron microscopy-based automated crystal orientation mapping and high-resolution imaging. Each triplet cons ...

2020

Nanosecond pulsed laser-processing of CVD diamond

Patrik Willi Hoffmann, Marco Cantoni, Sébastien Equis

This work considers the resulting material structural effects of laser-processing chemical vapor deposited (CVD) diamond. The utilized 532 nm wavelength laser had a pulse duration of 40 ns together with a spot diameter of ca. 40 mu m. The effect of cutting ...

ELSEVIER SCI LTD2020