Publications associées à Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Publications associées (9)

Influence of outdoor air pollution on European residential ventilative cooling potential

Residential ventilative cooling via natural ventilation is influenced by outdoor air pollution. However, relative to climate, outdoor air pollution is not comprehensively considered in determining the ventilative cooling potential of buildings. To assess t ...

ELSEVIER SCIENCE SA2023

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

Heat exchange potential of energy tunnels for different internal airflow characteristics

Pascal Turberg

Energy tunnels allow the harvesting of untapped heat at shallow depths in the underground to meet the thermal energy requirements of buildings and infrastructures over large areas. Such heat can derive from two sources: the ground surrounding energy tunnel ...

ELSEVIER2022

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Overview of recent gyrotron R&D towards DEMO within EUROfusion Work Package Heating and Current Drive

Jean-Philippe Hogge, Ioannis Pagonakis, Jérémy Genoud

Gyrotron R&D within the EUROfusion Work Package Heating and Current Drive (WPHCD) is addressing the challenging requirements posed on gyrotrons by the European concept for a demonstration fusion power plant (EU DEMO). These requirements, as specified withi ...

IOP Publishing Ltd2019

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Mihai Adrian Ionescu, Arnab Biswas, Cem Alper

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

Institute of Electrical and Electronics Engineers2017

Analysis of Substrate Currents Propagation in HVCMOS technology

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi ...

IEEE2016

Tailoring self-assembly and optoelectronic properties of organic semiconductors via macromolecular engineering

Andrea Gasperini

Conjugated polymers and small molecules are a promising class of semiconducting materials for application in macroelectronic and energy conversion devices. The development of high performance devices employing this class of semicrystalline materials ultima ...

EPFL2016

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Sara Rigante

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014