Publications associées à A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Denis Martin, Nicolas Grandjean, Marco Malinverni, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Marco Malinverni

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Sonia Conesa Boj, Alberto Casadei, Federico Matteini, Fauzia Jabeen, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci

Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...

Elsevier2015

Passivating contacts for homojunction solar cells using a-Si:H/c-Si hetero-interfaces

Bénédicte Demaurex

Crystalline silicon (c-Si) homojunction solar cells account for over 90% of the current photovoltaic market. However, further progress of this technology is limited by recombinative losses occurring at their metal-semiconductor contacts. The goal of this t ...

EPFL2014

Radiative recombination and optical gain spectra in biaxially strained n-type germanium

Gabriele Grosso

We calculate band-to-band radiative transition rate spectra in pure Ge as functions of applied tensile strain, heavy doping, charge injection density, and temperature. Direct and indirect phonon-assisted transitions are considered. Deformation potential th ...

Amer Physical Soc2013

Nature of the Charge Carriers and Conduction Mechanism in Anatase TiO2

Jacim Jacimovic

The anatase phase of TiO2 is a key material in the third generation of photovoltaics and for photo-catalytic devices. The number of promising applications, where one would profit from the electronic degrees of freedom of the material, like in memristors, s ...

EPFL2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Klaus Kern, Hagen Klauk

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...

2010

P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

Anna Fontcuberta i Morral, Carlo Colombo, Tonko Garma, Bernt Ketterer, Emanuele Uccelli, Marco Nicotra

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...

American Chemical Society2010

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006