High throughput screening platform for ultra large scale integration based on high-k silicon nanowire ISFET and 3D integration

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Organic memristive devices are gaining an increasing and considerable interest due to their attractive characteristics and potential applications, spanning from neuromorphic electronics to biosensing. In this work, a low-voltage operating memristive device ...

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The model includes explicit expressions, taking into account the first-order perturb ...

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

In this study, design considerations for ultra low voltage (ULV) standard-cell based memories (SCM) are presented. Trade-offs for area cost, leakage power, access time, and access energy are discussed and realized using different read logic styles, latch a ...

For a 4T pixel-based CMOS image sensors (CIS) readout chain, with column-level amplification and CDS, we show that the input-referred total noise in a standard 65 nm process can be reduced to 0.37 e-rms. Based on transient noise simulation using Eldo, the ...

Mono layer graphene field-effect sensors operating in liquid have been widely deployed for detecting a range of analyte species often under equilibrium conditions. Here we report on the real-time detection of the binding kinetics of the essential human enz ...

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

We report the results of scanning laser-beam-induced current (LBIC) measurements on silicon heterojunction solar cells that indicate the length scale over which photogenerated carriers are sensitive to local defects at the amorphous silicon/crystalline sil ...

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

Technology scaling has caused the feature sizes to shrink continuously, whereas interconnects, unlike transistors, have not followed the same trend. Designing 3D stack architectures is a recently proposed approach to overcome the power consumption and dela ...

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

High throughput screening platform for ultra large scale integration based on high-k silicon nanowire ISFET and 3D integration

Chattez avec Graph Search

Printed Organic Memristive Devices with Non-Zero-Crossing Hysteresis

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

High performance Fully-vertical GaN-on-Si power MOSFETs

In-Plane-Gate GaN Transistors for High-Power RF Applications

Ultra Low Voltage Synthesizable Memories: A Trade-Off Discussion in 65 nm CMOS

Sub-electron CIS noise analysis in 65 nm process

Real-Time Label-Free Direct Electronic Monitoring of Topoisomerase Enzyme Binding Kinetics on Graphene

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Scanning Laser-Beam-Induced Current Measurements of Lateral Transport Near-Junction Defects in Silicon Heterojunction Solar Cells

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Dynamic Thermal Management in 3D Multicore Architectures

9 MHz vibrating body FET tuning fork oscillator