Publications related to High throughput screening platform for ultra large scale integration based on high-k silicon nanowire ISFET and 3D integration

Related publications (14)

Printed Organic Memristive Devices with Non-Zero-Crossing Hysteresis

Organic memristive devices are gaining an increasing and considerable interest due to their attractive characteristics and potential applications, spanning from neuromorphic electronics to biosensing. In this work, a low-voltage operating memristive device ...

2025

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Mihai Adrian Ionescu, Michele Ghini, Fabio Bersano, Niccolò Martinolli, Eloi Régis L Collette

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

2025

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

Farzan Jazaeri

This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The model includes explicit expressions, taking into account the first-order perturb ...

PERGAMON-ELSEVIER SCIENCE LTD2021

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

Institute of Electrical and Electronics Engineers2017

Ultra Low Voltage Synthesizable Memories: A Trade-Off Discussion in 65 nm CMOS

Andreas Peter Burg, Pascal Andreas Meinerzhagen, Oskar Andersson

In this study, design considerations for ultra low voltage (ULV) standard-cell based memories (SCM) are presented. Trade-offs for area cost, leakage power, access time, and access energy are discussed and realized using different read logic styles, latch a ...

Institute of Electrical and Electronics Engineers2016

Sub-electron CIS noise analysis in 65 nm process

Christian Enz, Assim Boukhayma, Raffaele Capoccia

For a 4T pixel-based CMOS image sensors (CIS) readout chain, with column-level amplification and CDS, we show that the input-referred total noise in a standard 65 nm process can be reduced to 0.37 e-rms. Based on transient noise simulation using Eldo, the ...

2016

Real-Time Label-Free Direct Electronic Monitoring of Topoisomerase Enzyme Binding Kinetics on Graphene

Klaus Kern, Kannan Balasubramanian

Mono layer graphene field-effect sensors operating in liquid have been widely deployed for detecting a range of analyte species often under equilibrium conditions. Here we report on the real-time detection of the binding kinetics of the essential human enz ...

Amer Chemical Soc2015

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

2014

Scanning Laser-Beam-Induced Current Measurements of Lateral Transport Near-Junction Defects in Silicon Heterojunction Solar Cells

Christophe Ballif, Stefaan De Wolf, Antoine Descoeudres

We report the results of scanning laser-beam-induced current (LBIC) measurements on silicon heterojunction solar cells that indicate the length scale over which photogenerated carriers are sensitive to local defects at the amorphous silicon/crystalline sil ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

2011

Dynamic Thermal Management in 3D Multicore Architectures

Yusuf Leblebici, David Atienza Alonso, José Luis Ayala Rodrigo

Technology scaling has caused the feature sizes to shrink continuously, whereas interconnects, unlike transistors, have not followed the same trend. Designing 3D stack architectures is a recently proposed approach to overcome the power consumption and dela ...

IEEE and ACM2009

9 MHz vibrating body FET tuning fork oscillator

Mihai Adrian Ionescu, Maher Kayal, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009