Publications associées à A 2.4-GHz low power polar transmitter for wireless body area network applications

Publications associées (38)

Logic Synthesis and Optimization for CMOS and Post-CMOS Technologies

Logic synthesis is a cornerstone of electronic design automation (EDA), facilitating the optimization of power, performance, and area (PPA) in integrated circuits. As complementary metal-oxide-semiconductor (CMOS) technology approaches its physical limitat ...

EPFL2025

Integrated Wireless Power, Data Communication, and Thermal Sensing System for Autonomous Multisite Brain Implants

Mohammad Javad Karimi

Implanted medical devices (IMDs) have been widely developed to support the monitoring and recording of biological data inside the body or brain. Wirelessly powered IMDs, a subset of implantable electronics, have been proposed to eliminate the limitations r ...

EPFL2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

Kyojin Choo

This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A modular multiple frequency inductive link to wirelessly power multiple miniaturized implants

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

A modular multiple frequency coils inductive link system to wirelessly provide power for at least a medical implant at an output of a receiving coil, whereby the receiving coil is configured to be implanted in an organism. The modular multiple frequency co ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

On the use of Cramér-Rao Lower Bound for least-variance circuit parameters identification of Li-ion cells

Mario Paolone, Vladimir Sovljanski

Electrochemical Impedance Spectroscopy (EIS) and Equivalent Circuit Models (ECMs) are widely used to characterize the impedance and estimate parameters of electrochemical systems such as batteries. We use a generic ECM with ten parameters grouped to model ...

2024

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Kapil Bhardwaj, Sandro Carrara, Junrui Chen

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A Two-Wired High Input Impedance and High CMRR Active Electrode Insensitive to Component Mismatch

Alexandre Schmid, Mehdi Saberi

This article proposes a new two-wired amplifying active electrode (AE), presenting a high input impedance and a high common-mode rejection ratio (CMRR). In the proposed structure, the input impedance and the CMRR of the system are considerably increased by ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Intracavity Epsilon-Near-Zero Dual-Range Frequency Switch

Camille Sophie Brès, Marco Clementi, Jiaye Wu, Ji Zhou

Epsilon-near-zero (ENZ) nanophotonic devices with zero permittivity are known to exhibit adiabatic frequency translation via temporal refraction under extracavity excitation by intense light sources, which are however hard to integrate on-chip owing to a h ...

2024

Three-Dimensional Electrode Integration With Microwave Sensors for Precise Microparticle Detection in Microfluidics

Berk Küçükoglu

Microwave sensors integrated with microfluidic platforms can provide the size and permittivity of single cells and microparticles. Among the microwave sensor topologies, the planar arrangement of electrodes is a popular choice owing to the ease of fabricat ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2024

Three-wave-mixing quantum-limited kinetic inductance parametric amplifier operating at 6 T near 1 K

Camille René Charles Roy, Pasquale Scarlino, Simone Frasca, Guillaume Beaulieu

Parametric amplifiers play a crucial role in modern quantum technology by enabling the enhancement of weak signals with minimal added noise. Traditionally, Josephson junctions have been the primary choice for constructing parametric amplifiers. Nevertheles ...

American Physical Society (APS)2024

Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process

Niels Quack, Alain Yuji Takabayashi

Integrated nanoelectromechanical (NEM) relays can be used instead of transistors to implement ultra-low power logic circuits, due to their abrupt turn off characteristics and zero off-state leakage. Further, realizing circuits with 4-terminal (4-T) NEM rel ...

Royal Soc Chemistry2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Gennaro Termo, Jean-Michel Sallese, Adil Koukab

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Intelligent RF System for Ultra Low Power Spectrum Sensing with Machine Learning

Naci Pekçokgüler

The crowdedness of the RF spectrum constitutes problems in communication, however it also accommodates large amount of useful information. This information can be used to determine existing signals and operating contexts. However, spectrum condition varies ...

EPFL2024

Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

Mustafa Besirli

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

EPFL2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Ultra-Low Power Short-Range 60-GHz FMCW Radar Front-End

Sammy Cerida Rengifo

The millimeter wave (mmWave) frequency band is becoming very interesting over the past years because it provides the opportunity to operate using large bandwidths which are not available at lower frequencies. This enables new communication standards suppor ...

EPFL2023

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Samira Alexandra Frey

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023