Publication

A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI

Publications associées (30)

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Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to conventional SRAM due to its high-density, low-leakage, and inherent two-ported functionality. However, its dynamic storage mechanism requires power-hungry refresh cycles to maintain data. ...

IEEE2020