A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Ultralow-power sensing with inference functionality embedded in sensor nodes is essential for enabling the emerging pervasive intelligence. For acoustic inference sensing, the feature extraction can take advantage of power-efficient analog circuits. Howeve ...

Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the q ...

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

The increasing luminosity in HEP (High Energy Physics) colliders demands trigger systems to be more selective. First, more information from the detector is routed to the trigger system. Second, larger parts of this information are processed together. These ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

Like integrated electronics, integrated photonics such as Silicon Photonics benefit from increased device-density on a single chip. Silicon is an excellent material for integrated photonics because its high refractive index allows devices to be made small, ...

Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to conventional SRAM due to its high-density, low-leakage, and inherent two-ported functionality. However, its dynamic storage mechanism requires power-hungry refresh cycles to maintain data. ...

A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI

Chat with Graph Search

Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature Extraction

Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Low-Latency High-Bandwidth Circuit and System Design for Trigger Systems in High Energy Physics

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Integration of MEMS in Silicon Photonics

GC-eDRAM with Body-Bias Compensated Readout and Error Detection in 28nm FD-SOI