A dynamic operation of a PIN photodiode

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Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and ...

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon av ...

Narrowband photodetectors are useful for a myriad of applications involving color discrimination as well as biological imaging and machine vision. Prevalent devices use broadband light absorbing materials in conjunction with electric (charge collection nar ...

Single-photon avalanche diodes (SPADs) are direct photon-to-digital detectors that enable scalable arrays with Poisson-limited signal-to-noise ratio and picosecond timing resolution. However, SPAD detectors require a guard-ring structure to prevent lateral ...

The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored a ...

Single-photon detection and photon counting are useful tools in many fields, from light detection and ranging (LiDAR) to biomedical imaging and from time-resolved Raman spectroscopy to quantum applications. In this context, recently, single-photon avalanch ...

Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an o ...

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH3NH3PbI3 and its close relative, CH3NH3SnI3. In the dark state the device behaves as a dio ...

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for ac ...

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material ...

For many scientific applications, electron multiplying charge coupled devices (EMCCDs) have been the sensor of choice because of their high quantum efficiency and built-in electron amplification. Lately, many researchers introduced scientific complementary ...

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

Graphene has some drawbacks, like the absence of an electronic band gap which leads to only small gate switching ratios, and its fast carrier recombination that limits its use in optoelectronics. In order to overcome these issues, the aim of this thesis wa ...

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

A dynamic operation of a PIN photodiode

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CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

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