Publications related to A dynamic operation of a PIN photodiode

Related publications (30)

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Ekin Kizilkan

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

EPFL2024

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Ming-Lo Wu

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

Integrated silicon photonic MEMS

Niels Quack, Alain Yuji Takabayashi, Hamed Sattari

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and ...

SPRINGERNATURE2023

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Emanuele Ripiccini, Ming-Lo Wu

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon av ...

FRONTIERS MEDIA SA2022

Exploiting supramolecular assemblies for filterless ultra-narrowband organic photodetectors with inkjet fabrication capability

Frank Nüesch, Jakob Heier, Surendra Babu Anantharaman, Matthias Diethelm

Narrowband photodetectors are useful for a myriad of applications involving color discrimination as well as biological imaging and machine vision. Prevalent devices use broadband light absorbing materials in conjunction with electric (charge collection nar ...

Royal Society of Chemistry2019

Optical-stack optimization for improved SPAD photon detection efficiency

Edoardo Charbon, Claudio Bruschini, Rolando Ferrini, Arin Can Ülkü, Ivan Michel Antolovic, Scott Anthony Lindner, Ekin Kizilkan, Frédéric Zanella

Single-photon avalanche diodes (SPADs) are direct photon-to-digital detectors that enable scalable arrays with Poisson-limited signal-to-noise ratio and picosecond timing resolution. However, SPAD detectors require a guard-ring structure to prevent lateral ...

2019

High sensitivity single-photon avalanche diode array

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored a ...

2021

Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology

Edoardo Charbon, Myung Jae Lee

Single-photon detection and photon counting are useful tools in many fields, from light detection and ranging (LiDAR) to biomedical imaging and from time-resolved Raman spectroscopy to quantum applications. In this context, recently, single-photon avalanch ...

IOP PUBLISHING LTD2018

Dynamic range extension for photon counting arrays

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an o ...

2018

Photodiode Response in a CH3NH3PbI3/CH3NH3SnI3 Heterojunction

László Forró, Bálint Náfrádi, Endre Horvath, Massimo Spina, Andrea Pisoni

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH3NH3PbI3 and its close relative, CH3NH3SnI3. In the dark state the device behaves as a dio ...

2017

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Edoardo Charbon, Preethi Padmanabhan

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for ac ...

2016

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Denis Sallin

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

Edoardo Charbon

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material ...

2020

Analyzing blinking effects in super resolution localization microscopy with single-photon SPAD imagers

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Samuel Burri

For many scientific applications, electron multiplying charge coupled devices (EMCCDs) have been the sensor of choice because of their high quantum efficiency and built-in electron amplification. Lately, many researchers introduced scientific complementary ...

Spie-Int Soc Optical Engineering2016

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

Edoardo Charbon, Mahdi Aminian

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

Electronic transport properties of vertical and lateral graphene-based heterostructures

Roberto Urcuyo Solorzano

Graphene has some drawbacks, like the absence of an electronic band gap which leads to only small gate switching ratios, and its fast carrier recombination that limits its use in optoelectronics. In order to overcome these issues, the aim of this thesis wa ...

EPFL2016

Modeling for Ultra Low Noise CMOS Image Sensors

Raffaele Capoccia

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020