Publications associées à Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Publications associées (35)

Advanced analysis of fully-printed organic transistors platform for multi-ion detection in sweat

Danick Briand, Silvia Demuru, Xi Chen, Brince Paul Kunnel, Jaemin Kim

Organic electrochemical transistors are emerging as prominent biochemical sensors for multi-sensing, including ions, metabolites, hormones, or viruses. However, the implementation of the devices is mainly limited to a single-analyte detection and a single- ...

Elsevier BV2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"

Giulia Tagliabue, Fateme Kiani Shahvandi, Theodoros Tsoulos, Alan Richard Bowman

This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 ...

Zenodo2024

Quantum-mechanical effects in photoluminescence from thin crystalline gold films

Giulia Tagliabue, Fateme Kiani Shahvandi, Theodoros Tsoulos, Alan Richard Bowman

Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its ...

2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs

Giovanni Boero, Andras Kis, Jürgen Brugger, Georg Fantner, Nicola Marzari, Norma Rivano, Zhenyu Wang, Xia Liu, Ana Conde Rubio, Berke Erbas, Mitali Banerjee, Jin Jiang, Marcos Penedo Garcia

Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remain ...

Nature Research2024

Realization of Organocerium-Based Fullerene Molecular Materials Showing Mott Insulator-Type Behavior

Pragati Pandey

Electron-rich organocerium complexes (C5Me4H)(3)Ce and [(C5Me5)(2)Ce(ortho-oxa)], with redox potentials E-1/2 = -0.82 V and E-1/2 = -0.86 V versus Fc/Fc(+), respectively, were reacted with fullerene (C-60) in different stoichiometries to obtain molecular m ...

Amer Chemical Soc2024

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

Iop Publishing Ltd2024

Electrical and Optical Manifestations of Flat Band Physics in Van der Waals Materials

Gabriele Pasquale

The scientific progress is significantly transforming contemporary society with the introduction and widespread application of technologies like artificial intelligence and quantum computing. Despite their profound impact, these technologies necessitate en ...

EPFL2024

Thermoelectric power of overdoped Tl2201 crystals: charge density waves and T1 and T2 resistivities

Matthias Carsten Putzke

We report measurements of the in-plane thermoelectric power (TEP) for an overdoped (OD) crystal of the single layer cuprate superconductor Tl2Ba2CuO6+x (Tl2201) at several hole concentrations (p), from 300 or 400 K to below the superconducting transition t ...

Iop Publishing Ltd2024

Ternary Oxides of s - and p -Block Metals for Photocatalytic Solar-to-Hydrogen Conversion

Iurii Timrov

Oxides containing metals or metalloids from the p block of the periodic table (e.g., In, Sn, Sb, Pb, and Bi) are of technological interest as transparent conductors and light absorbers for solar-energy conversion due to the tunability of their electronic c ...

2024

Weyl metallic state induced by helical magnetic order

Henrik Moodysson Rønnow, Ivica Zivkovic, Jan Hugo Dil, Jian Rui Soh, Xupeng Yang

In the rapidly expanding field of topological materials there is growing interest in systems whose topological electronic band features can be induced or controlled by magnetism. Magnetic Weyl semimetals, which contain linear band crossings near the Fermi ...

Nature Portfolio2024

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Christian Wäckerlin

On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Wiley-VCH Verlag GmbH2024

Type-I antiferromagnetic Weyl semimetal InMnTi2

Nicola Marzari, Luca Binci, Davide Grassano

Topological materials have been a main focus of studies in the past decade due to their protected properties that can be exploited for the fabrication of new devices. Among them, Weyl semimetals are a class of topological semimetals with nontrivial linear ...

Amer Physical Soc2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Data-Intensive Exploration of the Photoelectrochemical Responses of Main-Group Metal Sulfides

Nicola Colonna

Materials that efficiently promote the thermodynamically uphill water-splitting reaction under solar illumination are essential for generating carbon-free ("green") hydrogen. Mapping out the combinatorial space of potential photocatalysts for this reaction ...

Amer Chemical Soc2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Wenfeng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Exciton migration in two-dimensional materials

Giovanni Consalvo Cistaro

Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

Nature Portfolio2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Machine-learning the electronic density of states: electronic properties without quantum mechanics

Chiheb Ben Mahmoud

The electronic density of states (DOS) quantifies the distribution of the energy levels that can be occupied by electrons in a quasiparticle picture and is central to modern electronic structure theory. It also underpins the computation and interpretation ...

EPFL2023