Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (32)

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Yanfei Zhao, Juan Francisco Gonzalez Marin, Ahmet Avsar, Cheol Yeon Cheon, Kristians Cernevics, Zhenyu Wang, Mukesh Kumar Tripathi, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Fermi energy determination for advanced smearing techniques

Nicola Marzari, Flaviano José Dos Santos

Smearing techniques are widely used in first-principles calculations of metallic and magnetic materials where they improve the accuracy of Brillouin-zone sampling and lessen the impact of level-crossing instabilities. Smearing introduces a fictitious elect ...

AMER PHYSICAL SOC2023

Foldable Hole-Transporting Materials for Merging Electronic States between Defective and Perfect Perovskite Sites

Keith Gregory Brooks, Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Kasparas Rakstys, Yi Zhang, Hiroyuki Kanda, Ruiyuan Hu, Jianxing Xia, Qurat Ul Ain

Defective and perfect sites naturally exist within electronic semiconductors, and considerable efforts to reduce defects to improve the performance of electronic devices, especially in hybrid organic-inorganic perovskites (ABX(3)), are undertaken. Herein, ...

Wiley-V C H Verlag Gmbh2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Nicolò D'Anna, Gabriel Aeppli

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Giant two-photon absorption of anatase TiO2 in Au/TiO2 core-shell nanoparticles

Majed Chergui, Lijie Wang, Malte Oppermann

We report on deep-to-near-UV transient absorption spectra of core-shell Au/SiO2 and Au/TiO2 nanoparticles (NPs) excited at the surface plasmon resonance of the Au core, and of UV-excited bare anatase TiO2 NPs. The bleaching of the first excitonic transitio ...

CHINESE LASER PRESS2023

Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

Peng Chen, Xupeng Yang

The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The th ...

Nature Portfolio2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Electrical detection of the flat-band dispersion in van der Waals field-effect structures

Andras Kis, Oleg Yazyev, Fedele Tagarelli, Kristians Cernevics, Zhe Sun, Gabriele Pasquale, Edoardo Lopriore

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat- ...

2023

Electronic Structure of Few-Layer Black Phosphorus from & mu;-ARPES

Christophe Berthod, Nicola Marzari, Marco Gibertini, Samuel Poncé

Black phosphorus (BP) stands out among two-dimensional(2D) semiconductorsbecause of its high mobility and thickness dependent direct band gap.However, the quasiparticle band structure of ultrathin BP has remainedinaccessible to experiment thus far. Here we ...

AMER CHEMICAL SOC2023

Murunskite - a new class of functional material

Davor Tolj

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Page 2 sur 2