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Fault-Tolerant Multi-Level Logic Decoder for Nanoscale Crossbar Memory Arrays

Publications associées (25)

Lightfields behind amplitude masks: Creating phase discontinuities

Hans Peter Herzig, Wilfried Noell, Myun Sik Kim, Toralf Scharf, Krishnaparvathy Puthankovilakam

Shaping of light fields behind amplitude and phase masks the basis the lithographic structure reproduction. The aerial image or better the intensity distribution defines the resolution of the structure to be printed. Contrast is the main parameter and to a ...

Ieee2016

Panel: Looking Backwards and Forwards

Giovanni De Micheli

Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity ha ...

IEEE2016

Shaping intensity behind amplitude masks for proximity correction lithography: Design, measurement and realization

Hans Peter Herzig, David Nguyen, Qing Tan, Toralf Scharf, Krishnaparvathy Puthankovilakam

Proximity exposure techniques in lithography are getting more and more popular because of the cost of ownership advantage of mask aligners compared to projection systems. In this paper a gap between simulation and the final result, the prints will be close ...

Spie-Int Soc Optical Engineering2014

Direct imprinting of organic-inorganic hybrid materials into high aspect ratio sub-100 nm structures

Jürgen Brugger, Thomas Kiefer, Victor Javier Cadarso Busto, Vaida Auzelyte

The challenging fabrication of sub-100-nm structures with high aspect ratio by UV-nanoimprint lithography (NIL) is addressed in this work. Thermal shrinkage is induced by cooling the structures below room temperature to avoid the issues commonly arising du ...

Springer Verlag2014

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Yusuf Leblebici, Giovanni De Micheli, Michele De Marchi, Davide Sacchetto, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the ...

Institute of Electrical and Electronics Engineers2014