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Direct fabrication of NIL stamps using Stencil Lithography

Publications associées (22)

Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

A novel approach to dielectrophoresis using carbon electrodes

Philippe Renaud, Rodrigo Martinez Duarte

Carbon-electrode dielectrophoresis (carbon-DEP) is demonstrated here as an alternative to more traditional DEP techniques. Carbon-DEP combines advantages of metal-electrode and insulator-based DEP by using low-cost fabrication techniques and low voltages f ...

Wiley-Blackwell2011