Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

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In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

Providing an additional degree of freedom for binary information encoding and nonreciprocal information transmission, chiral single photons have become a new research frontier in quantum optics. Without using complex external conditions (e.g., magnetic fie ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...

The growing field of pulsed electron microscopy (PEM) currently suffers from technical challenges, many of which are related to the inefficiency of present pulsed emitters. In this research, we explore semiconductor photoemitters as a replacement of conven ...

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

Understanding exciton-exciton interaction in multiply excited nanocrystals is crucial to their utilization as functional materials. Yet, for lead halide perovskite nanocryst-als, which are promising candidates for nanocrystal-based technologies, numerous c ...

Layered hybrid organic-inorganic perovskite (LHOIP) materials are an emerging class of semiconductors endorsed as a more stable alternative compared to the more widely investigated 3D hybrid organic-inorganic halide perovskites (HOIP). Consisting of altern ...

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

Multiply excited states in semiconductor quantum dots feature intriguing physics and play a crucial role in nanocrystal-based technologies. While photoluminescence provides a natural probe to investigate these states, room-temperature single-particle spect ...

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

This work investigates halide segregation in methylammonium-free wide bandgap perovskites by photoluminescence quantum yield (PLQY) and advanced electron microscopy techniques. Our study reveals how the formation of nano-emitting low-energy domains embedde ...

Strongly confined, fully inorganic cesium lead halide perovskite nanocrystals are of great promise for light-emitting devices in the blue spectral range owing to their high photoluminescence quantum yields. A combination of broadband fluorescence up-conver ...

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

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Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Plasmonic nanobar-on-mirror antenna with giant local chirality: a new platform for ultrafast chiral single-photon emission

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Towards semiconducting nano-engineered photocathodes for electron microscopy applications

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Resolving the Controversy in Biexciton Binding Energy of Cesium Lead Halide Perovskite Nanocrystals through Heralded Single-Particle Spectroscopy

Synthesis and Characterization of Functionalized Spacer Cations for the Incorporation in Layered Perovskites

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Semiconductor-based device architectures in multimaterial fibers

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Heralded Spectroscopy Reveals Exciton-Exciton Correlations in Single Colloidal Quantum Dots

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Nano-emitting Heterostructures Violate Optical Reciprocity and Enable Efficient Photoluminescence in Halide-Segregated Methylammonium-Free Wide Bandgap Perovskites

Resonant Band-Edge Emissive States in Strongly Confined CsPbBr3 Perovskite Nanoplatelets