A Charge-Based Compact Model of Double Gate MOSFET

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We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

A Charge-Based Compact Model of Double Gate MOSFET

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