Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

The escalating energy demand and the imperative necessity to reduce the carbon footprint require transformative approaches to energy conversion. Materials chemistry plays a pivotal role in addressing these global challenges by developing novel materials fo ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

Understanding the mechanical behavior of silicon nanowiresis essentialfor the implementation of advanced nanoscale devices. Although bendingtests are predominantly used for this purpose, their findings shouldbe properly interpreted through modeling. Variou ...

Despite the rise in services generating learning analytics, there is a lack of standard models and guidelines for data integration and aggregation to inform the design choices of applications supporting learning analytics. We propose a bottom-up, user-driv ...

Toward industry 4.0, modern manufacturing companies are aiming at building digital twins to manage physical assets, processes, people, and places. Since in this environment, massive amounts of data have been generated and collected, integration and managem ...

Recent years have seen an exponential increase in the amount of data available in all sciences and application domains. Macroecology is part of this "Big Data" trend, with a strong rise in the volume of data that we are using for our research. Here, we sum ...

A persistent obstacle for constructing kinetic models of metabolism is uncertainty in the kinetic properties of enzymes. Currently, available methods for building kinetic models can cope indirectly with uncertainties by integrating data from different biol ...

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

The NEREID project ("NanoElectronics Roadmap for Europe: Identification and Dissemination") is dedicated to mapping the future of European Nanoelectronics. NEREID's objective is to develop a medium and long term roadmap for the European nanoelectronics ind ...

This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-μm-thick MEMS on the same silicon-on-insu ...

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Peer-to-Peer (P2P) systems rely on machine-to-machine ad-hoc communications to offer services to a community. Contrary to the classical client-server architecture, P2P systems consider all peers, i.e., all nodes participating in the network, as being equal ...

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Ele ...

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Hybrid organic/metal-oxide shells on semiconductor nanocrystals via colloidal atomic layer deposition

Semiconductor-based device architectures in multimaterial fibers

Nanomechanical Modeling of the Bending Response of Silicon Nanowires

An Integrated Approach to Learning Analytics

A semantic-driven approach for Industry 4.0

Macroecology in the age of Big Data - Where to go from here?

Uncertainty reduction in biochemical kinetic models: Enforcing desired model properties

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Piezoresistivity characterization of silicon nanowires through monolithic MEMS

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications

Polarity Control at Runtime : from Circuit Concept to Device Fabrication

Polarization response of nanowires a la carte

Message Passing in Semantic Peer-to-Peer Overlay Networks

Nanowire systems: technology and design (invited paper)

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Technological development of high-k dielectric FinFETs for liquid environment