Publications related to Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

Related publications (27)

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Pasquale Scarlino, Fabian Oppliger, Franco De Palma

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

2024

Hybrid organic/metal-oxide shells on semiconductor nanocrystals via colloidal atomic layer deposition

Ona Segura Lecina

The escalating energy demand and the imperative necessity to reduce the carbon footprint require transformative approaches to energy conversion. Materials chemistry plays a pivotal role in addressing these global challenges by developing novel materials fo ...

EPFL2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Nanomechanical Modeling of the Bending Response of Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir

Understanding the mechanical behavior of silicon nanowiresis essentialfor the implementation of advanced nanoscale devices. Although bendingtests are predominantly used for this purpose, their findings shouldbe properly interpreted through modeling. Variou ...

AMER CHEMICAL SOC2023

An Integrated Approach to Learning Analytics

Denis Gillet, Juan Carlos Farah, Sandy Ingram

Despite the rise in services generating learning analytics, there is a lack of standard models and guidelines for data integration and aggregation to inform the design choices of applications supporting learning analytics. We propose a bottom-up, user-driv ...

2021

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Lucas Güniat, Nicolas Tappy, Santhanu Panikar Ramanandan, Didem Dede, Akshay Balgarkashi

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

A semantic-driven approach for Industry 4.0

Dimitrios Kyritsis, Gökan May, Sangje Cho

Toward industry 4.0, modern manufacturing companies are aiming at building digital twins to manage physical assets, processes, people, and places. Since in this environment, massive amounts of data have been generated and collected, integration and managem ...

IEEE2019

Macroecology in the age of Big Data - Where to go from here?

Recent years have seen an exponential increase in the amount of data available in all sciences and application domains. Macroecology is part of this "Big Data" trend, with a strong rise in the volume of data that we are using for our research. Here, we sum ...

2020

Uncertainty reduction in biochemical kinetic models: Enforcing desired model properties

Vassily Hatzimanikatis, Ljubisa Miskovic, Michaël Roger Germain Moret

A persistent obstacle for constructing kinetic models of metabolism is uncertainty in the kinetic properties of enzymes. Currently, available methods for building kinetic models can cope indirectly with uncertainties by integrating data from different biol ...

2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Lucia Baldi Unser

The NEREID project ("NanoElectronics Roadmap for Europe: Identification and Dissemination") is dedicated to mapping the future of European Nanoelectronics. NEREID's objective is to develop a medium and long term roadmap for the European nanoelectronics ind ...

PERGAMON-ELSEVIER SCIENCE LTD2019

Piezoresistivity characterization of silicon nanowires through monolithic MEMS

Yusuf Leblebici

This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-μm-thick MEMS on the same silicon-on-insu ...

2017

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications

Arnab Biswas

The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...

EPFL2015

Polarity Control at Runtime : from Circuit Concept to Device Fabrication

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

Polarization response of nanowires a la carte

Anna Fontcuberta i Morral, Eleonora Russo, Esther Alarcon Llado, Martin Heiss, Francesca Amaduzzi, Alberto Casadei

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Nature Publishing Group2015

Message Passing in Semantic Peer-to-Peer Overlay Networks

Karl Aberer, Philippe Cudré-Mauroux

Peer-to-Peer (P2P) systems rely on machine-to-machine ad-hoc communications to offer services to a community. Contrary to the classical client-server architecture, P2P systems consider all peers, i.e., all nodes participating in the network, as being equal ...

2007

Nanowire systems: technology and design (invited paper)

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Luca Gaetano Amarù, Michele De Marchi, Shashi Kanth Bobba

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

Royal Soc2014

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014