Publications associées à CMOS-based microanalysis systems

Publications associées (22)

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

EPFL2025

A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca

Designing SPADs with high sensitivity in a wide wavelength range is crucial since the applications utilizing SPAD-based sensors target different parts of the spectrum. Here, we introduce a novel technique to achieve a wider sensitivity spectrum through the ...

Nature Research2024

Quasi-operando Transmission Electron Microscopy Diagnostics for Electrocatalytic Processes in Liquids

Vasiliki Tileli

It is of great interest to the energy community to understand how the mechano-physico-chemical phenomena that eventually lead to device degradation are related to the startup, operation, and shutdown phases. For electrocatalytic systems operating in liquid ...

Swiss Chemical Soc2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Scaling silicon-based quantum computing using CMOS technology

Edoardo Charbon

As quantum processors grow in complexity, attention is moving to the scaling prospects of the entire quantum computing system, including the classical support hardware. Recent results in high-fidelity control of individual spins in silicon, combined with d ...

NATURE PORTFOLIO2021

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Magnetic-free silicon nitride integrated optical isolator

Tobias Kippenberg, Junqiu Liu, Rui Ning Wang, Jijun He, Anat Siddharth, Terence Albert Emile Blésin

Integrated photonics enables signal synthesis, modulation and conversion using photonic integrated circuits (PICs). Many materials have been developed, among which silicon nitride (Si3N4) has emerged as a leading platform particularly for nonlinear photoni ...

Nature Publishing Group2021

Large-Format Time-Gated SPAD Cameras for Real-Time Phasor-Based FLIM

Arin Can Ülkü

Fluorescence lifetime imaging microscopy (FLIM) is an imaging modality often used to monitor biochemical properties of a cell or a tissue. In addition to conventional fluorescence microscopy features, such as selective labeling and non-invasiveness, FLIM e ...

EPFL2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast

Victor Carle Adrien Boureau

We compare two transmission electron microscopy (TEM) based techniques that can provide highly spatially resolved quantitative measurements of magnetic induction fields at high sensitivity. To this end, the magnetic induction of a ferromagnetic NiFe nanowi ...

IOP PUBLISHING LTD2021

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

Jean-Michel Sallese, Chiara Rossi

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model. Conver ...

2020

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

Edoardo Charbon

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material ...

2020

NMR microsystem for label-free characterization of 3D nanoliter microtissues

Kyle Joel Rodriguez, Jürgen Brugger, Giovanni Boero, Marco Grisi, Gaurasundar Marc Conley

Performing chemical analysis at the nanoliter (nL) scale is of paramount importance for medicine, drug development, toxicology, and research. Despite the numerous methodologies available, a tool for obtaining chemical information non-invasively is still mi ...

Nature Research2020

Monolithic piezoelectric control of soliton microcombs

Tobias Kippenberg, Junqiu Liu, Rui Ning Wang, Erwan Guillaume Albert Lucas, Wenle Weng, Jijun He, Arslan Sajid Raja, Miles Henry Anderson, Tianyi Liu

High-speed actuation of laser frequency(1)is critical in applications using lasers and frequency combs(2,3), and is a prerequisite for phase locking, frequency stabilization and stability transfer among optical carriers. For example, high-bandwidth feedbac ...

NATURE PUBLISHING GROUP2020

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic

Giovanni De Micheli, Mathias Soeken, Eleonora Testa

Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies a ...

2020

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs. We have developed and optimized a selective and low-damage p-GaN etching recipe to stop at the AlGaN ...

IEEE2020