Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

The magnet feeders are part of the critical systems of a fusion reactor since they represent the interface between the in-cryostat components at 4.5 K and the room-temperature cryogenic plant and power supply. The European DEMO tokamak foresees 16 toroidal ...

We report measurements of the in-plane thermoelectric power (TEP) for an overdoped (OD) crystal of the single layer cuprate superconductor Tl2Ba2CuO6+x (Tl2201) at several hole concentrations (p), from 300 or 400 K to below the superconducting transition t ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

A frequency scaling governor is critical for the performance management of cloud servers, as it enhances energy efficiency and helps to control operational temperatures, thereby ensuring system reliability. However, our in-depth analysis of the application ...

Smarty is a fully-reconfigurable on-chip feed-forward artificial neural network (ANN) with ten integrated time-to-digital converters (TDCs) designed in a 16 nm FinFET CMOS technology node. The integration of TDCs together with an ANN aims to reduce system ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

At room temperature, mechanical motion driven by the quantum backaction of light has been observed only in pioneering experiments in which an optical restoring force controls the oscillator stiffness1,2. For solid-state mechanical resonators in which oscil ...

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical functionalities o ...

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Chattez avec Graph Search

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

The magnet feeders for the European DEMO fusion reactor: Conceptual design and recent advances

Thermoelectric power of overdoped Tl2201 crystals: charge density waves and T1 and T2 resistivities

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Lithium tantalate photonic integrated circuits for volume manufacturing

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Is the powersave governor really saving power?

On-Chip Fully Reconfigurable Artificial Neural Network in 16 nm FinFET for Positron Emission Tomography

Silicon nitride electric-field poled microresonator modulator

Room-temperature quantum optomechanics using an ultralow noise cavity

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation