Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

High-temperature superconductors (HTSs) enable exclusive operating conditions for fusion magnets, boosting their performance up to 20 T generated magnetic fields in the temperature range from 4 K to 20 K. One of the main technological issues of HTS conduct ...

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

A major upgrade of the European DIPOle (EDIPO) test facility, which will allow the testing of superconducting samples both for fusion and for high-energy physics applications, is taking place at the Swiss Plasma Center. With a target background field of 15 ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

The present invention relates to a method for operating a resonant power converter (1) having a primary stage (2) and a secondary stage (3) at least one of which is actively operated and includes a half-bridge or full-bridge inverter (21) having a pull-up ...

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

This paper discusses different measurement methods to evaluate the efficiency of WBG-based power supply solutions, including electrical measurement methods and their verification with calorimetric methods, and compares the performance of Si-based and GaN-b ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Chattez avec Graph Search

Experimental study of stability, quench propagation and detection methods on 15 kA sub-scale HTS fusion conductors in SULTAN

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Progress in the design and manufacturing of the EDIPO 2 cryostat

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Method for operating a power converter and power converter

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Electronic metadevices for terahertz applications

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Measurement of WBG-based power supplies

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials