Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

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Publications associées (32)

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In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

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Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

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The internal fields in 2.2nm thick InGaN quantum wells in a GaN LED structure have been investigated by using aberration-corrected off-axis electron holography with a spatial resolution of better than 1nm. To improve the spatial resolution, different types ...

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GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

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Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

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Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...

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Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

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Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

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Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

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Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

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