Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

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We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

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Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

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Thermal Rectification in Telescopic Nanowires: Impact of Thermal Boundary Resistance

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Anomalous Electroluminescence Characteristics of Perovskite Modules

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Demonstration of a Plasmonic Nonlinear Pseudodiode

Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS, and CuxTiSe2

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

Non-volatile data storage medium and system

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

On Energy Control of Modular Multilevel Converters

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Contact Design for Silicon Heterojunction Solar Cells

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor