Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

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Publications associées (28)

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Catherine Erine, Luca Nela

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

AIP American Institute of Physics2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Chao Liu, Alessandro Floriduz

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

Schmitt trigger-based control strategy for the discharge phase of an ultra-high-voltage bidirectional flyback

Yves Perriard, Alexis Boegli, Raphaël Johannes Charles Mottet

The control strategy to discharge a capacitive load such as a dielectric elastomer actuator charged to several kilo-volts is critical to obtain a safe and reliable actuation. In the case of this publication, an ultra-high voltage bidirectional flyback conv ...

IEEE2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Maria Vittoria Oropallo

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

An Analytical Model for the Prediction of the Maximum Output Voltage Reachable with an Ultra-high Voltage Flyback Converter Driving Capacitive Actuators

Yves Perriard, Alexis Boegli, Raphaël Johannes Charles Mottet

The DC-DC flyback converter is one of the most suitable topologies to generate the voltages necessary to operate Dielectric Elastomer Actuators. Voltages which can range from 5 to 20 kV. Previous works demonstrated through experiments the flyback’s ability ...

IEEE2021

Characterisation of Silicon Heterojunction Solar Cells Beyond Standard Test Conditions

Jean Cattin

The global photovoltaic market is mostly dominated by solar cells based on crystalline silicon (c-Si), which are covering 95% of the market. This thesis concerns silicon heterojunction (SHJ), a high-efficiency technology with a 2% market share in 2018, but ...

EPFL2020

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