Chunmin Zhang

Cette personne a quitté l’EPFL

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Publications associées (30)

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Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018

A Close-in LiDAR for Diffusive Media based on a 32 × 32 CMOS SPAD Image Sensor

Edoardo Charbon, Claudio Bruschini, Chunmin Zhang, Scott Anthony Lindner

2019

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

2018

Time-Resolved NIROT 'Pioneer' System for Imaging Oxygenation of the Preterm Brain: Preliminary Results

Matthias Wolf, Edoardo Charbon, Scott Anthony Lindner, Chunmin Zhang

In preterm infants, there is a risk of long-term cognitive, motor and behavioral impairments due to hemorrhagic and/or ischemic lesions. If detected early, lesions can be prevented. A bedside imaging modality, capable of early detection of both disorders, ...

SPRINGER INTERNATIONAL PUBLISHING AG2020

A 256x128 3D-Stacked (45nm) SPAD FLASH LiDAR with 7-Level Coincidence Detection and Progressive Gating for 100m Range and 10klux Background Light

Edoardo Charbon, Chunmin Zhang, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes, Baris Can Efe

IEEE2021

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

2017

A Novel 32 x 32, 224 Mevents/s Time Resolved SPAD Image Sensor for Near-Infrared Optical Tomography

Edoardo Charbon, Ivan Michel Antolovic, Chunmin Zhang, Scott Anthony Lindner, Juan Mata Pavia

To increase the spatial resolution of near-infrared optical tomography, we successfully designed and tested a 32×32 time-resolved SPAD image sensor with unprecedented sensitivity in the near-infrared and fast image acquisition speed. ...

2018

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity L ...

2018

Time Domain Near-Infrared Optical Tomography with Time-of-Flight SPAD Camera: The New Generation

Edoardo Charbon, Chunmin Zhang, Scott Anthony Lindner, Juan Mata Pavia

We present the first laboratory results of the new generation of time domain near-infrared optical tomography setup, which is based on a time-of-flight 32×32 SPAD camera with high photon detection probability in the NIR range. ...

2018

A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface Traps

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper presents a generalized charge-based EKV MOSFET model that includes the effects of trapped charges in the bulk oxide and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile charge d ...

2021