Pierre-Emmanuel Julien Marc Gaillardon

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Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories and pipeline registers, which typically cannot be power-gated during sleep periods as they need to retain data and prog ...

In recent years, Boolean methods in logic synthesis have been drawing the attention of EDA researchers due to the continuous push to advance quality of results. Boolean methods require high computational cost, as they rely on complete functional properties ...

A method for transforming a tautology check of an original logic circuit into a contradiction check of the original logic circuit and vice versa comprises interpreting the original logic circuit in terms of AND, OR, MAJ, MIN, XOR, XNOR, INV original logic ...

We fabricated and characterized ambipolar Silicon Nanowire (SiNW) FET transistors featuring two independent Gate-All-Around (GAA) electrodes and vertically stacked SiNW channels. One of the gate electrodes is exploited to dynamically select the polarity of ...

Resistive random access memory (RRAM) based multiplexers and field programmable gate arrays (FPGAs) are provided. The RRAM-based multiplexers and FPGAs include a 4T1R programming structure to program the RRAMs. The programming structure includes two progra ...

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized ...

Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for future integrated circuits. Regular logic tiles have been recognized as an efficient layout fabric for ambipolar devices. In this work, we present a process/ ...

With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induced in ...

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal devi ...

A Field Programmable Gate Array (FPGA) of the island-type comprising a plurality of cluster-based Configurable Logic Blocks (CLBs), whereby each of the cluster-based CLBs is surrounded by a global routing structure formed by a plurality of multiplexers and ...

Pierre-Emmanuel Julien Marc Gaillardon

Chattez avec Graph Search

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

A ReRAM-Based Non-Volatile Flip-Flop with Sub-VT Read and CMOS Voltage-Compatible Write

Extending Boolean Methods for Scalable Logic Synthesis

Method for speeding up boolean satisfiability

Polarity Control in Double-Gate, Gate-All-Around Vertically Stacked Silicon Nanowire FETs

Resistive random access memory based multiplexers and field programmable gate arrays

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process

Process/Design Co-optimization of Regular Logic Tiles for Double-Gate Silicon Nanowire Transistors

Functionality Enhanced Memories for Edge-AI Embedded Systems

Applications of Multi-Terminal Memristive Devices: A Review

High-performance low-power near-vt resistive memory-based fpga