Publications de Maneesha Rupakula

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (ii) al ...

Maneesha Rupakula

Chattez avec Graph Search

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity