Publications by Maneesha Rupakula

Related publications (6)

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Francesco Bellando, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Francesco Bellando, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Guillaume Charles Henri Herment, Mihai Adrian Ionescu, Francesco Bellando, Hoël Maxime Guérin, Fabien Patrick Wildhaber, Erick Antonio Garcia Cordero, Junrui Zhang, Maneesha Rupakula

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

Mihai Adrian Ionescu, Francesco Bellando, Hoël Maxime Guérin, Junrui Zhang, Fabien Patrick Wildhaber, Erick Antonio Garcia Cordero, Johan Frédéric Longo, Maneesha Rupakula, Guillaume Charles Henri Herment

This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (ii) al ...

IEEE2018

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

Mihai Adrian Ionescu, Francesco Bellando, Hoël Maxime Guérin, Junrui Zhang, Fabien Patrick Wildhaber, Erick Antonio Garcia Cordero, Maneesha Rupakula, Johan Frédéric Longo

IEEE2018