Publications by Maneesha Rupakula

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Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (ii) al ...

Maneesha Rupakula

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InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity