Esther Alarcon Llado

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Publications associées (26)

Electrical transport in C-doped GaAs nanowires: surface effects

Anna Fontcuberta i Morral, Martin Heiss, Esther Alarcon Llado, Eleonora Russo, Alberto Casadei, Fauzia Jabeen, Jil Schwender, Mohammad Ramezani

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pi ...

Wiley-Blackwell2013

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Ignasi Canales Mundet

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Institute of Physics2013

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Anna Fontcuberta i Morral, Sonia Conesa Boj, Esther Alarcon Llado

Thanks to their wide band structure tunability, GaAs1-xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their ...

Institute of Physics2013

Nanoscale Probing of High Photovoltages at 109 degrees Domain Walls

Esther Alarcon Llado

We report the direct observation of nanoscale photovoltaic current-voltage properties associated with directional steps of the electrostatic potential at 109 degrees domain walls in ferroelectric BiFeO3 thin films with highly ordered ferroelectric stripe d ...

Taylor & Francis Ltd2012

Efficient Photovoltaic Current Generation at Ferroelectric Domain Walls

Esther Alarcon Llado

We elucidate the mechanism of a newly observed photovoltaic effect which occurs in ferroelectrics with periodic domain structures. Under sufficiently strong illumination, domain walls function as nanoscale generators of the photovoltaic current. The steps ...

2011

PN junction rectification in electrolyte gated Mg-doped InN

Esther Alarcon Llado

PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...

AIP American Institute of Physics2011

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