Esther Alarcon Llado

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BiVO4 thin film photoanodes grown by chemical vapor deposition

Esther Alarcon Llado, Le Chen

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zo ...

Royal Soc Chemistry2014

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Anna Fontcuberta i Morral, Esther Alarcon Llado, Francesca Amaduzzi

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Institute of Physics2016

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin Heiss, Federico Matteini, Eleonora Russo, Sonia Conesa Boj, Esther Alarcon Llado, Francesca Amaduzzi

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

American Institute of Physics2014

Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Eleonora Russo, Federico Matteini, Esther Alarcon Llado, Anna Dalmau Mallorquí

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 x 1 mm(2) array of InAs nanowires on p-type silicon for the fabrication ...

Institute of Physics2014

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Anna Fontcuberta i Morral, Sonia Conesa Boj, Esther Alarcon Llado

Thanks to their wide band structure tunability, GaAs1-xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their ...

Institute of Physics2013

P-type InGaN across the entire alloy composition range

Esther Alarcon Llado

A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into InxGa1-xN (0.1

Amer Inst Physics2013