Publications de Georg Rossbach

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The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set ...

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

We demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta similar to -1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained ...

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orth ...

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

We present a comprehensive study of the anisotropic optical properties of nonpolar GaN/AlGaN multiple quantum wells intentionally designed to act as an active region of a planar microcavity operating in the strong-coupling regime. The strain induced by the ...

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Georg Rossbach

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Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

High-Density Excitonic Effects in GaN : Mott-Transition and Polariton Lasing

Polariton lasing in a hybrid bulk ZnO microcavity

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Biexcitonic molecules survive excitons at the Mott transition