Publications de Martin Heiss | EPFL Graph Search

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We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and wurtzite phases, by means of temperature-dependent photoluminescence. At 10 K the emission from an en ...

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

The effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing nanowires with or without an AlGaAs capping shell as a function of the diameter. We find that the optical properties of unpassivated nanowires are governed by Ferm ...

GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-fie ...

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pi ...

Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a catalyst. The process parameter space for successful growth was studied. By optimizing the growth temperature and gas pressure, high aspect ratio germanium n ...

The fundamental limits for the measurement of the efficiency of single nanowire solar cell devices are presented. We evaluate the effect of the substrate, light polarization, and existence of Mie resonances in the absorption of the solar spectrum for nanow ...

Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth w ...

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queiss ...

Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

We show that optically active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, th ...

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate tha ...

We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is ...

This paper describes the fabrication of functional optical devices by sectioning quantum-dot-in-nanowires systems with predefined lengths and orientations. This fabrication process requires only two steps, embedding the nanowires in epoxy and using an ultr ...

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Martin Heiss

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Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Impact of surfaces on the optical properties of GaAs nanowires

Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

Electrical transport in C-doped GaAs nanowires: surface effects

Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study

Fundamental limits in the external quantum efficiency of single nanowire solar cells

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Single-nanowire solar cells beyond the Shockley-Queisser limit

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Quantum Dot Opto-Mechanics in a Fully Self-Assembled Nanowire

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Nanoskiving Core-Shell Nanowires: A New Fabrication Method for Nano-optics

Polarization response of nanowires a la carte

Semiconductor nanowires for efficient, sustainable solar energy harvesting